Investigations of diffusion kinetics in Si/Ta/Cu/W and Si/Co/Ta systems by secondary neutral mass spectrometry

A. Lakatos, G. Erdelyi, G. A. Langer, L. Daroczi, K. Vad, A. Csik, A. Dudas, D. L. Beke

Research output: Article

2 Citations (Scopus)

Abstract

Proper understanding of the degradation mechanisms and diffusion kinetics of copper and cobalt interconnections for advanced microelectronics is important from the point of view of fundamental research and technology as well. In this paper Si(substrate)/Ta(10 nm)/Cu(25 nm)/W(10 nm) and Si(substrate)/Co(150 nm)/Ta(10 nm) samples, prepared by DC magnetron sputtering, were in investigated. The samples were annealed at several temperatures ranging from 423 K to 823 K for various times. The composition distributions were detected by means of Secondary Neutral Mass Spectrometry (SNMS). Microstructural characterization of samples was carried out by means of Transmission Electron Microscopy (TEM). It is shown that the changes in the composition profiles were mainly caused by grain boundary, GB, diffusion and the effective GB diffusion coefficients of Ta in Cu were determined both by the "first appearance" and "centre-gradient" methods. The activation energy is 100 kJ/mol. The importance of the Ta penetration into the Cu and its accumulation at the Cu/W interface can lead to an increase of the Ta content in the copper film. This can be an important factor in the change/degradation of the physical parameters (e.g. the electrical resistance) of interconnects. Furthermore a Ta segregation factor in Cu was evaluated. Preliminary results in the Si(substrate)/Co(150 nm)/Ta(10 nm) indicate fast (GB) diffusion of the Si into the Co layer, formation of a cobalt silicide layer at the Co/Si interface and Si accumulation first at the Ta/Co interface and later a retarded accumulation at the free Ta surface.

Original languageEnglish
Pages (from-to)493-497
Number of pages5
JournalVacuum
Volume85
Issue number4
DOIs
Publication statusPublished - okt. 21 2010

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Investigations of diffusion kinetics in Si/Ta/Cu/W and Si/Co/Ta systems by secondary neutral mass spectrometry'. Together they form a unique fingerprint.

  • Cite this