Investigation of thermal stability of hydrogenated amorphous Si/Ge multilayers

A. Csík, M. Serényi, Z. Erdélyi, A. Nemcsics, C. Cserháti, G. Langer, D. Beke, C. Frigeri, A. Simon

Research output: Article

3 Citations (Scopus)

Abstract

Thermal stability of hydrogenated amorphous Si/Ge multilayers has been investigated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Small-Angle X-Ray Diffraction (SAXRD) techniques. Amorphous H-Si/Ge multilayers were prepared by RF sputtering with 1.5 and 6 ml/min H2 flow-rate. It is shown by Elastic Recoil Detection Analysis (ERDA) that the hydrogen concentration increased by increasing the H2 flow-rate. Annealing of the samples was carried out at 400 and 450 °C for several hours. It has been observed that samples prepared with 6 ml/min flow-rate at both annealing temperatures underwent significant structural changes: the surface of the samples was visibly roughened, gas bubbles were formed and craters were created. The decay of the periodic structure of Si and Ge layers in these types of multilayers was faster than in non-hydrogenated samples. Samples prepared with 1.5 ml/min flow-rate have similar behaviour at 450 °C, but at 400 °C the decay of the first order SAXRD peaks was slower than in case of the non-hydrogenated multilayers. Qualitatively the observed behaviour can be explained by the fast desorption of the saturated hydrogen, leading to the formation of bubbles and craters at 450 °C, as well as, at 400 °C in the sample with lower H-content, by the possible passivation of the dangling bonds resulting in a slowing down of the diffusion intermixing.

Original languageEnglish
Pages (from-to)137-140
Number of pages4
JournalVacuum
Volume84
Issue number1
DOIs
Publication statusPublished - aug. 25 2009

Fingerprint

Multilayers
Thermodynamic stability
thermal stability
Flow rate
flow velocity
Hydrogen
Annealing
craters
X ray diffraction
Dangling bonds
Periodic structures
bubbles
Passivation
Sputtering
Desorption
annealing
Gases
decay
hydrogen
Transmission electron microscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Instrumentation
  • Surfaces, Coatings and Films

Cite this

Investigation of thermal stability of hydrogenated amorphous Si/Ge multilayers. / Csík, A.; Serényi, M.; Erdélyi, Z.; Nemcsics, A.; Cserháti, C.; Langer, G.; Beke, D.; Frigeri, C.; Simon, A.

In: Vacuum, Vol. 84, No. 1, 25.08.2009, p. 137-140.

Research output: Article

Csík, A. ; Serényi, M. ; Erdélyi, Z. ; Nemcsics, A. ; Cserháti, C. ; Langer, G. ; Beke, D. ; Frigeri, C. ; Simon, A. / Investigation of thermal stability of hydrogenated amorphous Si/Ge multilayers. In: Vacuum. 2009 ; Vol. 84, No. 1. pp. 137-140.
@article{398a750582094472a7639c2d7097814e,
title = "Investigation of thermal stability of hydrogenated amorphous Si/Ge multilayers",
abstract = "Thermal stability of hydrogenated amorphous Si/Ge multilayers has been investigated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Small-Angle X-Ray Diffraction (SAXRD) techniques. Amorphous H-Si/Ge multilayers were prepared by RF sputtering with 1.5 and 6 ml/min H2 flow-rate. It is shown by Elastic Recoil Detection Analysis (ERDA) that the hydrogen concentration increased by increasing the H2 flow-rate. Annealing of the samples was carried out at 400 and 450 °C for several hours. It has been observed that samples prepared with 6 ml/min flow-rate at both annealing temperatures underwent significant structural changes: the surface of the samples was visibly roughened, gas bubbles were formed and craters were created. The decay of the periodic structure of Si and Ge layers in these types of multilayers was faster than in non-hydrogenated samples. Samples prepared with 1.5 ml/min flow-rate have similar behaviour at 450 °C, but at 400 °C the decay of the first order SAXRD peaks was slower than in case of the non-hydrogenated multilayers. Qualitatively the observed behaviour can be explained by the fast desorption of the saturated hydrogen, leading to the formation of bubbles and craters at 450 °C, as well as, at 400 °C in the sample with lower H-content, by the possible passivation of the dangling bonds resulting in a slowing down of the diffusion intermixing.",
author = "A. Cs{\'i}k and M. Ser{\'e}nyi and Z. Erd{\'e}lyi and A. Nemcsics and C. Cserh{\'a}ti and G. Langer and D. Beke and C. Frigeri and A. Simon",
year = "2009",
month = "8",
day = "25",
doi = "10.1016/j.vacuum.2009.04.021",
language = "English",
volume = "84",
pages = "137--140",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
number = "1",

}

TY - JOUR

T1 - Investigation of thermal stability of hydrogenated amorphous Si/Ge multilayers

AU - Csík, A.

AU - Serényi, M.

AU - Erdélyi, Z.

AU - Nemcsics, A.

AU - Cserháti, C.

AU - Langer, G.

AU - Beke, D.

AU - Frigeri, C.

AU - Simon, A.

PY - 2009/8/25

Y1 - 2009/8/25

N2 - Thermal stability of hydrogenated amorphous Si/Ge multilayers has been investigated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Small-Angle X-Ray Diffraction (SAXRD) techniques. Amorphous H-Si/Ge multilayers were prepared by RF sputtering with 1.5 and 6 ml/min H2 flow-rate. It is shown by Elastic Recoil Detection Analysis (ERDA) that the hydrogen concentration increased by increasing the H2 flow-rate. Annealing of the samples was carried out at 400 and 450 °C for several hours. It has been observed that samples prepared with 6 ml/min flow-rate at both annealing temperatures underwent significant structural changes: the surface of the samples was visibly roughened, gas bubbles were formed and craters were created. The decay of the periodic structure of Si and Ge layers in these types of multilayers was faster than in non-hydrogenated samples. Samples prepared with 1.5 ml/min flow-rate have similar behaviour at 450 °C, but at 400 °C the decay of the first order SAXRD peaks was slower than in case of the non-hydrogenated multilayers. Qualitatively the observed behaviour can be explained by the fast desorption of the saturated hydrogen, leading to the formation of bubbles and craters at 450 °C, as well as, at 400 °C in the sample with lower H-content, by the possible passivation of the dangling bonds resulting in a slowing down of the diffusion intermixing.

AB - Thermal stability of hydrogenated amorphous Si/Ge multilayers has been investigated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Small-Angle X-Ray Diffraction (SAXRD) techniques. Amorphous H-Si/Ge multilayers were prepared by RF sputtering with 1.5 and 6 ml/min H2 flow-rate. It is shown by Elastic Recoil Detection Analysis (ERDA) that the hydrogen concentration increased by increasing the H2 flow-rate. Annealing of the samples was carried out at 400 and 450 °C for several hours. It has been observed that samples prepared with 6 ml/min flow-rate at both annealing temperatures underwent significant structural changes: the surface of the samples was visibly roughened, gas bubbles were formed and craters were created. The decay of the periodic structure of Si and Ge layers in these types of multilayers was faster than in non-hydrogenated samples. Samples prepared with 1.5 ml/min flow-rate have similar behaviour at 450 °C, but at 400 °C the decay of the first order SAXRD peaks was slower than in case of the non-hydrogenated multilayers. Qualitatively the observed behaviour can be explained by the fast desorption of the saturated hydrogen, leading to the formation of bubbles and craters at 450 °C, as well as, at 400 °C in the sample with lower H-content, by the possible passivation of the dangling bonds resulting in a slowing down of the diffusion intermixing.

UR - http://www.scopus.com/inward/record.url?scp=69249213469&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=69249213469&partnerID=8YFLogxK

U2 - 10.1016/j.vacuum.2009.04.021

DO - 10.1016/j.vacuum.2009.04.021

M3 - Article

AN - SCOPUS:69249213469

VL - 84

SP - 137

EP - 140

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 1

ER -