Abstract
Thermal stability of hydrogenated amorphous Si/Ge multilayers has been investigated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Small-Angle X-Ray Diffraction (SAXRD) techniques. Amorphous H-Si/Ge multilayers were prepared by RF sputtering with 1.5 and 6 ml/min H2 flow-rate. It is shown by Elastic Recoil Detection Analysis (ERDA) that the hydrogen concentration increased by increasing the H2 flow-rate. Annealing of the samples was carried out at 400 and 450 °C for several hours. It has been observed that samples prepared with 6 ml/min flow-rate at both annealing temperatures underwent significant structural changes: the surface of the samples was visibly roughened, gas bubbles were formed and craters were created. The decay of the periodic structure of Si and Ge layers in these types of multilayers was faster than in non-hydrogenated samples. Samples prepared with 1.5 ml/min flow-rate have similar behaviour at 450 °C, but at 400 °C the decay of the first order SAXRD peaks was slower than in case of the non-hydrogenated multilayers. Qualitatively the observed behaviour can be explained by the fast desorption of the saturated hydrogen, leading to the formation of bubbles and craters at 450 °C, as well as, at 400 °C in the sample with lower H-content, by the possible passivation of the dangling bonds resulting in a slowing down of the diffusion intermixing.
| Original language | English |
|---|---|
| Pages (from-to) | 137-140 |
| Number of pages | 4 |
| Journal | Vacuum |
| Volume | 84 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - aug. 25 2009 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Instrumentation
- Surfaces, Coatings and Films
Cite this
Investigation of thermal stability of hydrogenated amorphous Si/Ge multilayers. / Csík, A.; Serényi, M.; Erdélyi, Z.; Nemcsics, A.; Cserháti, C.; Langer, G.; Beke, D.; Frigeri, C.; Simon, A.
In: Vacuum, Vol. 84, No. 1, 25.08.2009, p. 137-140.Research output: Article
}
TY - JOUR
T1 - Investigation of thermal stability of hydrogenated amorphous Si/Ge multilayers
AU - Csík, A.
AU - Serényi, M.
AU - Erdélyi, Z.
AU - Nemcsics, A.
AU - Cserháti, C.
AU - Langer, G.
AU - Beke, D.
AU - Frigeri, C.
AU - Simon, A.
PY - 2009/8/25
Y1 - 2009/8/25
N2 - Thermal stability of hydrogenated amorphous Si/Ge multilayers has been investigated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Small-Angle X-Ray Diffraction (SAXRD) techniques. Amorphous H-Si/Ge multilayers were prepared by RF sputtering with 1.5 and 6 ml/min H2 flow-rate. It is shown by Elastic Recoil Detection Analysis (ERDA) that the hydrogen concentration increased by increasing the H2 flow-rate. Annealing of the samples was carried out at 400 and 450 °C for several hours. It has been observed that samples prepared with 6 ml/min flow-rate at both annealing temperatures underwent significant structural changes: the surface of the samples was visibly roughened, gas bubbles were formed and craters were created. The decay of the periodic structure of Si and Ge layers in these types of multilayers was faster than in non-hydrogenated samples. Samples prepared with 1.5 ml/min flow-rate have similar behaviour at 450 °C, but at 400 °C the decay of the first order SAXRD peaks was slower than in case of the non-hydrogenated multilayers. Qualitatively the observed behaviour can be explained by the fast desorption of the saturated hydrogen, leading to the formation of bubbles and craters at 450 °C, as well as, at 400 °C in the sample with lower H-content, by the possible passivation of the dangling bonds resulting in a slowing down of the diffusion intermixing.
AB - Thermal stability of hydrogenated amorphous Si/Ge multilayers has been investigated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Small-Angle X-Ray Diffraction (SAXRD) techniques. Amorphous H-Si/Ge multilayers were prepared by RF sputtering with 1.5 and 6 ml/min H2 flow-rate. It is shown by Elastic Recoil Detection Analysis (ERDA) that the hydrogen concentration increased by increasing the H2 flow-rate. Annealing of the samples was carried out at 400 and 450 °C for several hours. It has been observed that samples prepared with 6 ml/min flow-rate at both annealing temperatures underwent significant structural changes: the surface of the samples was visibly roughened, gas bubbles were formed and craters were created. The decay of the periodic structure of Si and Ge layers in these types of multilayers was faster than in non-hydrogenated samples. Samples prepared with 1.5 ml/min flow-rate have similar behaviour at 450 °C, but at 400 °C the decay of the first order SAXRD peaks was slower than in case of the non-hydrogenated multilayers. Qualitatively the observed behaviour can be explained by the fast desorption of the saturated hydrogen, leading to the formation of bubbles and craters at 450 °C, as well as, at 400 °C in the sample with lower H-content, by the possible passivation of the dangling bonds resulting in a slowing down of the diffusion intermixing.
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U2 - 10.1016/j.vacuum.2009.04.021
DO - 10.1016/j.vacuum.2009.04.021
M3 - Article
AN - SCOPUS:69249213469
VL - 84
SP - 137
EP - 140
JO - Vacuum
JF - Vacuum
SN - 0042-207X
IS - 1
ER -