INVESTIGATION OF THE ELECTRICAL PROPERTIES OF EPITAXIAL GaAs LAYERS FOR MICROWAVE DEVICES.

B. Podor, N. Nador, I. Bertóti

Research output: Chapter

Abstract

Study of the basic electrical properties of GaAs epitaxial layers grown on semi-insulating layers and of the dependence of these properties on the growth conditions by carrying out extensive conductivity, Hall effect and mobility measurements between 77-400 K is described.

Original languageEnglish
Title of host publicationUnknown Host Publication Title
PublisherAkad Kiado
Pages279-290
Number of pages12
Publication statusPublished - 1974
EventColloq on Microwave Commun, 5th, Proc, Prepr - Budapest, Hung
Duration: jún. 24 1974jún. 30 1974

Other

OtherColloq on Microwave Commun, 5th, Proc, Prepr
CityBudapest, Hung
Period6/24/746/30/74

Fingerprint

Hall mobility
Epitaxial layers
Hall effect
Electric properties

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Podor, B., Nador, N., & Bertóti, I. (1974). INVESTIGATION OF THE ELECTRICAL PROPERTIES OF EPITAXIAL GaAs LAYERS FOR MICROWAVE DEVICES. In Unknown Host Publication Title (pp. 279-290). Akad Kiado.

INVESTIGATION OF THE ELECTRICAL PROPERTIES OF EPITAXIAL GaAs LAYERS FOR MICROWAVE DEVICES. / Podor, B.; Nador, N.; Bertóti, I.

Unknown Host Publication Title. Akad Kiado, 1974. p. 279-290.

Research output: Chapter

Podor, B, Nador, N & Bertóti, I 1974, INVESTIGATION OF THE ELECTRICAL PROPERTIES OF EPITAXIAL GaAs LAYERS FOR MICROWAVE DEVICES. in Unknown Host Publication Title. Akad Kiado, pp. 279-290, Colloq on Microwave Commun, 5th, Proc, Prepr, Budapest, Hung, 6/24/74.
Podor B, Nador N, Bertóti I. INVESTIGATION OF THE ELECTRICAL PROPERTIES OF EPITAXIAL GaAs LAYERS FOR MICROWAVE DEVICES. In Unknown Host Publication Title. Akad Kiado. 1974. p. 279-290
Podor, B. ; Nador, N. ; Bertóti, I. / INVESTIGATION OF THE ELECTRICAL PROPERTIES OF EPITAXIAL GaAs LAYERS FOR MICROWAVE DEVICES. Unknown Host Publication Title. Akad Kiado, 1974. pp. 279-290
@inbook{4299623c1a1d4ad9b96f71459a2f9ca1,
title = "INVESTIGATION OF THE ELECTRICAL PROPERTIES OF EPITAXIAL GaAs LAYERS FOR MICROWAVE DEVICES.",
abstract = "Study of the basic electrical properties of GaAs epitaxial layers grown on semi-insulating layers and of the dependence of these properties on the growth conditions by carrying out extensive conductivity, Hall effect and mobility measurements between 77-400 K is described.",
author = "B. Podor and N. Nador and I. Bert{\'o}ti",
year = "1974",
language = "English",
pages = "279--290",
booktitle = "Unknown Host Publication Title",
publisher = "Akad Kiado",

}

TY - CHAP

T1 - INVESTIGATION OF THE ELECTRICAL PROPERTIES OF EPITAXIAL GaAs LAYERS FOR MICROWAVE DEVICES.

AU - Podor, B.

AU - Nador, N.

AU - Bertóti, I.

PY - 1974

Y1 - 1974

N2 - Study of the basic electrical properties of GaAs epitaxial layers grown on semi-insulating layers and of the dependence of these properties on the growth conditions by carrying out extensive conductivity, Hall effect and mobility measurements between 77-400 K is described.

AB - Study of the basic electrical properties of GaAs epitaxial layers grown on semi-insulating layers and of the dependence of these properties on the growth conditions by carrying out extensive conductivity, Hall effect and mobility measurements between 77-400 K is described.

UR - http://www.scopus.com/inward/record.url?scp=0016217947&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0016217947&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0016217947

SP - 279

EP - 290

BT - Unknown Host Publication Title

PB - Akad Kiado

ER -