Investigation of nonlinear thermal parameters of compound semiconductor devices

Zoltan Sarkany, Marta Rencz

Research output: Conference contribution

Abstract

A common property of compound semiconductor materials is the high temperature dependency of thermal conductivity. In this paper we present a method which can help determining the temperature coefficient of these materials using thermal transient measurement results. In the third section we validate the method using numerical experiments. Then in the fourth section we show that it can be applied to measured results also with good results.

Original languageEnglish
Title of host publication2013 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2013
Publication statusPublished - szept. 2 2013
Event2013 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2013 - Barcelona, Spain
Duration: ápr. 16 2013ápr. 18 2013

Publication series

Name2013 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2013

Other

Other2013 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2013
CountrySpain
CityBarcelona
Period4/16/134/18/13

ASJC Scopus subject areas

  • Hardware and Architecture

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  • Cite this

    Sarkany, Z., & Rencz, M. (2013). Investigation of nonlinear thermal parameters of compound semiconductor devices. In 2013 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2013 [6559450] (2013 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2013).