Investigation of Mo defects in 4H-SiC by means of density functional theory

A. Csóré, A. Gällström, E. Janzén, A. Gali

Research output: Conference contribution

2 Citations (Scopus)

Abstract

We investigated Molybdenum (Mo) defects in 4H silicon carbide (SiC). This system can be suitable candidate for in vivo biomarker applications since it shows photoluminescence (PL) in the near-infrared (NIR) region. In order to reveal the origin of this Mo-related PL center we carried out ab initio density functional theory (DFT) calculations on two microscopic models.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2015
EditorsFabrizio Roccaforte, Filippo Giannazzo, Francesco La Via, Roberta Nipoti, Danilo Crippa, Mario Saggio
PublisherTrans Tech Publications Ltd
Pages261-264
Number of pages4
ISBN (Print)9783035710427
DOIs
Publication statusPublished - jan. 1 2016
Event16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
Duration: okt. 4 2015okt. 9 2015

Publication series

NameMaterials Science Forum
Volume858
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
CountryItaly
CitySicily
Period10/4/1510/9/15

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Csóré, A., Gällström, A., Janzén, E., & Gali, A. (2016). Investigation of Mo defects in 4H-SiC by means of density functional theory. In F. Roccaforte, F. Giannazzo, F. La Via, R. Nipoti, D. Crippa, & M. Saggio (Eds.), Silicon Carbide and Related Materials 2015 (pp. 261-264). (Materials Science Forum; Vol. 858). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.858.261