Investigation of an ion-milled Si/Cr multilayer using micro-RBS, ellipsometry and AES depth profiling techniques

A. Simon, A. Sulyok, M. Novák, G. Juhász, T. Lohner, M. Fried, A. Barna, R. Huszank, M. Menyhárd

Research output: Article

5 Citations (Scopus)

Abstract

To investigate the details of the ion beam induced mixing and validate the Auger electron spectroscopy depth profiling technique, sputter-deposited Si 40 nm/Cr 40 nm multilayer samples were irradiated with a 20 keV CF4+ ion beam. Due to the ion bombardment the top Si layer was damaged and a crater was created. Elemental depth profiles and layer thicknesses together with surface topography were measured with Rutherford backscattering spectrometry by applying a focussed 2 MeV He+ beam. The thickness of the top Si layer was also determined from ellipsometry measurements. The results are compared to that of obtained from Auger electron spectroscopy depth profiling.

Original languageEnglish
Pages (from-to)2212-2215
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume267
Issue number12-13
DOIs
Publication statusPublished - jún. 15 2009

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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