To investigate the details of the ion beam induced mixing and validate the Auger electron spectroscopy depth profiling technique, sputter-deposited Si 40 nm/Cr 40 nm multilayer samples were irradiated with a 20 keV CF4+ ion beam. Due to the ion bombardment the top Si layer was damaged and a crater was created. Elemental depth profiles and layer thicknesses together with surface topography were measured with Rutherford backscattering spectrometry by applying a focussed 2 MeV He+ beam. The thickness of the top Si layer was also determined from ellipsometry measurements. The results are compared to that of obtained from Auger electron spectroscopy depth profiling.
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - jún. 15 2009|
ASJC Scopus subject areas
- Nuclear and High Energy Physics