Interdisciplinary surface studies on porous silicon (PSi)-II. Cathodoluminescence (CD, Auger (AES), electron energy loss (EELS) and Raman spectroscopy of different PSi samples

C. Jardin, B. Gruzza, E. Vázsonyi, G. Gergely

Research output: Article

5 Citations (Scopus)

Abstract

Porous silicon (PSi) samples prepared with different electrochemical procedures and experimental parameters have been studied using AES, EELS, Raman spectroscopy and cathodoluminescence. AES and EELS of anodic oxidized PSi samples indicate the formation of SiO2, with a band gap of 9 ± 0.5 eV as measured in the loss spectra from the threshold for interband transitions. Oxygen is not detected in freshly etched samples; these PSi layers are characterized by Auger and loss spectra close to that of elemental Si; some differences with respect to bulk Si spectra are attributed to the local chemical surroundings of Si atoms and particularly to the presence of hydrogen resulting from the HF treatment. A red shift of the CL emission with respect to photoluminescence is generally observed in cathodoluminescence experiments. Strong local intensity variations may also be detected; these bright 'hot spots' are attributed to a localized electron beam heating, corresponding to the temperature rise of Si clusters embedded in insulating SiO2. The dimensions of the Si crystallites of a given morphology are estimated from the shift and the half-width of the one-phonon Raman peak detected near 520 cm-1 for Si. Some weak bands detected in the Raman spectra of PSi(p) formed on a p-type substrate are attributed to amorphous silicon, while the Raman spectra of Psi(n) display a crystalline-like character.

Original languageEnglish
Pages (from-to)497-499
Number of pages3
JournalVacuum
Volume46
Issue number5-6
DOIs
Publication statusPublished - 1995

Fingerprint

Cathodoluminescence
Electron energy loss spectroscopy
Porous silicon
cathodoluminescence
porous silicon
Raman spectroscopy
energy dissipation
electron energy
Raman scattering
Energy dissipation
Raman spectra
Electrons
Amorphous silicon
Crystallites
red shift
crystallites
amorphous silicon
Hydrogen
Electron beams
Photoluminescence

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Instrumentation
  • Surfaces and Interfaces

Cite this

@article{a4d9c5e303f945bcab895671a965bf49,
title = "Interdisciplinary surface studies on porous silicon (PSi)-II. Cathodoluminescence (CD, Auger (AES), electron energy loss (EELS) and Raman spectroscopy of different PSi samples",
abstract = "Porous silicon (PSi) samples prepared with different electrochemical procedures and experimental parameters have been studied using AES, EELS, Raman spectroscopy and cathodoluminescence. AES and EELS of anodic oxidized PSi samples indicate the formation of SiO2, with a band gap of 9 ± 0.5 eV as measured in the loss spectra from the threshold for interband transitions. Oxygen is not detected in freshly etched samples; these PSi layers are characterized by Auger and loss spectra close to that of elemental Si; some differences with respect to bulk Si spectra are attributed to the local chemical surroundings of Si atoms and particularly to the presence of hydrogen resulting from the HF treatment. A red shift of the CL emission with respect to photoluminescence is generally observed in cathodoluminescence experiments. Strong local intensity variations may also be detected; these bright 'hot spots' are attributed to a localized electron beam heating, corresponding to the temperature rise of Si clusters embedded in insulating SiO2. The dimensions of the Si crystallites of a given morphology are estimated from the shift and the half-width of the one-phonon Raman peak detected near 520 cm-1 for Si. Some weak bands detected in the Raman spectra of PSi(p) formed on a p-type substrate are attributed to amorphous silicon, while the Raman spectra of Psi(n) display a crystalline-like character.",
author = "C. Jardin and B. Gruzza and E. V{\'a}zsonyi and G. Gergely",
year = "1995",
doi = "10.1016/0042-207X(94)00115-4",
language = "English",
volume = "46",
pages = "497--499",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
number = "5-6",

}

TY - JOUR

T1 - Interdisciplinary surface studies on porous silicon (PSi)-II. Cathodoluminescence (CD, Auger (AES), electron energy loss (EELS) and Raman spectroscopy of different PSi samples

AU - Jardin, C.

AU - Gruzza, B.

AU - Vázsonyi, E.

AU - Gergely, G.

PY - 1995

Y1 - 1995

N2 - Porous silicon (PSi) samples prepared with different electrochemical procedures and experimental parameters have been studied using AES, EELS, Raman spectroscopy and cathodoluminescence. AES and EELS of anodic oxidized PSi samples indicate the formation of SiO2, with a band gap of 9 ± 0.5 eV as measured in the loss spectra from the threshold for interband transitions. Oxygen is not detected in freshly etched samples; these PSi layers are characterized by Auger and loss spectra close to that of elemental Si; some differences with respect to bulk Si spectra are attributed to the local chemical surroundings of Si atoms and particularly to the presence of hydrogen resulting from the HF treatment. A red shift of the CL emission with respect to photoluminescence is generally observed in cathodoluminescence experiments. Strong local intensity variations may also be detected; these bright 'hot spots' are attributed to a localized electron beam heating, corresponding to the temperature rise of Si clusters embedded in insulating SiO2. The dimensions of the Si crystallites of a given morphology are estimated from the shift and the half-width of the one-phonon Raman peak detected near 520 cm-1 for Si. Some weak bands detected in the Raman spectra of PSi(p) formed on a p-type substrate are attributed to amorphous silicon, while the Raman spectra of Psi(n) display a crystalline-like character.

AB - Porous silicon (PSi) samples prepared with different electrochemical procedures and experimental parameters have been studied using AES, EELS, Raman spectroscopy and cathodoluminescence. AES and EELS of anodic oxidized PSi samples indicate the formation of SiO2, with a band gap of 9 ± 0.5 eV as measured in the loss spectra from the threshold for interband transitions. Oxygen is not detected in freshly etched samples; these PSi layers are characterized by Auger and loss spectra close to that of elemental Si; some differences with respect to bulk Si spectra are attributed to the local chemical surroundings of Si atoms and particularly to the presence of hydrogen resulting from the HF treatment. A red shift of the CL emission with respect to photoluminescence is generally observed in cathodoluminescence experiments. Strong local intensity variations may also be detected; these bright 'hot spots' are attributed to a localized electron beam heating, corresponding to the temperature rise of Si clusters embedded in insulating SiO2. The dimensions of the Si crystallites of a given morphology are estimated from the shift and the half-width of the one-phonon Raman peak detected near 520 cm-1 for Si. Some weak bands detected in the Raman spectra of PSi(p) formed on a p-type substrate are attributed to amorphous silicon, while the Raman spectra of Psi(n) display a crystalline-like character.

UR - http://www.scopus.com/inward/record.url?scp=0029310310&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029310310&partnerID=8YFLogxK

U2 - 10.1016/0042-207X(94)00115-4

DO - 10.1016/0042-207X(94)00115-4

M3 - Article

AN - SCOPUS:0029310310

VL - 46

SP - 497

EP - 499

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 5-6

ER -