Influence of the nitrogen content on the field emission properties of a-CN x films prepared by pulsed laser deposition

E. Fogarassy, T. Szorenyi, F. Antoni, J. P. Stoquert, G. Pirio, J. Olivier, P. Legagneux, P. Boher, O. Pons-Y-Moll

Research output: Conference article

10 Citations (Scopus)

Abstract

Amorphous carbon nitride (a-CN x ) films were grown on silicon substrates by ArF excimer laser ablation of a graphite target in the presence of nitrogen at various gas pressures. By working at elevated pressures (up to 100 Pa), high amounts of nitrogen can be incorporated into the films (N/C ≤ 0.4) which lead to strong enhancement of their field emission properties. This behaviour was demonstrated to be mainly related to changes in the surface roughness of the samples, in connection with the development of graphite-like structures.

Original languageEnglish
Pages (from-to)316-320
Number of pages5
JournalApplied Surface Science
Volume197-198
DOIs
Publication statusPublished - jan. 1 2002
EventCola 2001 - Tsukuba, Japan
Duration: okt. 1 2001okt. 1 2001

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ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Fogarassy, E., Szorenyi, T., Antoni, F., Stoquert, J. P., Pirio, G., Olivier, J., Legagneux, P., Boher, P., & Pons-Y-Moll, O. (2002). Influence of the nitrogen content on the field emission properties of a-CN x films prepared by pulsed laser deposition Applied Surface Science, 197-198, 316-320. https://doi.org/10.1016/S0169-4332(02)00389-6