Influence of oxygen on the absorption of silicon carbide nanoparticles

Márton Vörös, Péter Deák, Thomas Frauenheim, Adam Gali

Research output: Conference contribution

4 Citations (Scopus)

Abstract

We have investigated the absorption of 0.9, 1.4 nm silicon carbide nanoparticles (SiC NPs) by time-dependent density functional calculations, focusing on the effect of different oxygen adsorbates of the surface. We have found that negatively charged Si-O-, Si-COO- defects dramatically lower the optical gap of SiC NPs. Our findings can help interpret recent controversary experiments on colloidal SiC NPs.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2010
Pages520-523
Number of pages4
DOIs
Publication statusPublished - ápr. 28 2011
Event8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010 - Oslo, Norway
Duration: aug. 29 2010szept. 2 2010

Publication series

NameMaterials Science Forum
Volume679-680
ISSN (Print)0255-5476

Other

Other8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010
CountryNorway
CityOslo
Period8/29/109/2/10

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Influence of oxygen on the absorption of silicon carbide nanoparticles'. Together they form a unique fingerprint.

  • Cite this

    Vörös, M., Deák, P., Frauenheim, T., & Gali, A. (2011). Influence of oxygen on the absorption of silicon carbide nanoparticles. In Silicon Carbide and Related Materials 2010 (pp. 520-523). (Materials Science Forum; Vol. 679-680). https://doi.org/10.4028/www.scientific.net/MSF.679-680.520