In situ electrochemical impedance spectroscopy of Zr-1%Nb under VVER primary circuit conditions

Gabor Nagy, Z. Kerner, T. Pajkossy

Research output: Article

13 Citations (Scopus)

Abstract

Oxide layers were grown on tubular samples of Zr-1%Nb under conditions simulating those in VVER-type pressurised water reactors, viz. in near-neutral borate solutions in an autoclave at 290 °C. These samples were investigated using electrochemical impedance spectroscopy which was found to be suitable to follow in situ the corrosion process. A -CPEox∥Rox- element was used to characterise the oxide layer on Zr-1%Nb. Both the CPEox coefficient, σox, and the parallel resistance, Rox, were found to be thickness dependent. The layer thickness, however, can only be calculated after a calibration procedure. The temperature dependence of the CPEox element was also found to be anomalous while the temperature dependence of Rox indicates that the oxide layer has semiconductor properties. The relaxation time - defined as (Roxσox)1/α - was found to be quasi-independent of oxidation time and temperature; thus it is characteristic to the oxide layer on Zr-1%Nb.

Original languageEnglish
Pages (from-to)230-236
Number of pages7
JournalJournal of Nuclear Materials
Volume300
Issue number2-3
DOIs
Publication statusPublished - febr. 2002

Fingerprint

Electrochemical impedance spectroscopy
Oxides
impedance
Networks (circuits)
oxides
spectroscopy
Borates
Pressurized water reactors
Autoclaves
pressurized water reactors
temperature dependence
autoclaves
Relaxation time
Temperature
borates
Calibration
Corrosion
Semiconductor materials
corrosion
Oxidation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

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title = "In situ electrochemical impedance spectroscopy of Zr-1{\%}Nb under VVER primary circuit conditions",
abstract = "Oxide layers were grown on tubular samples of Zr-1{\%}Nb under conditions simulating those in VVER-type pressurised water reactors, viz. in near-neutral borate solutions in an autoclave at 290 °C. These samples were investigated using electrochemical impedance spectroscopy which was found to be suitable to follow in situ the corrosion process. A -CPEox∥Rox- element was used to characterise the oxide layer on Zr-1{\%}Nb. Both the CPEox coefficient, σox, and the parallel resistance, Rox, were found to be thickness dependent. The layer thickness, however, can only be calculated after a calibration procedure. The temperature dependence of the CPEox element was also found to be anomalous while the temperature dependence of Rox indicates that the oxide layer has semiconductor properties. The relaxation time - defined as (Roxσox)1/α - was found to be quasi-independent of oxidation time and temperature; thus it is characteristic to the oxide layer on Zr-1{\%}Nb.",
author = "Gabor Nagy and Z. Kerner and T. Pajkossy",
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T1 - In situ electrochemical impedance spectroscopy of Zr-1%Nb under VVER primary circuit conditions

AU - Nagy, Gabor

AU - Kerner, Z.

AU - Pajkossy, T.

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N2 - Oxide layers were grown on tubular samples of Zr-1%Nb under conditions simulating those in VVER-type pressurised water reactors, viz. in near-neutral borate solutions in an autoclave at 290 °C. These samples were investigated using electrochemical impedance spectroscopy which was found to be suitable to follow in situ the corrosion process. A -CPEox∥Rox- element was used to characterise the oxide layer on Zr-1%Nb. Both the CPEox coefficient, σox, and the parallel resistance, Rox, were found to be thickness dependent. The layer thickness, however, can only be calculated after a calibration procedure. The temperature dependence of the CPEox element was also found to be anomalous while the temperature dependence of Rox indicates that the oxide layer has semiconductor properties. The relaxation time - defined as (Roxσox)1/α - was found to be quasi-independent of oxidation time and temperature; thus it is characteristic to the oxide layer on Zr-1%Nb.

AB - Oxide layers were grown on tubular samples of Zr-1%Nb under conditions simulating those in VVER-type pressurised water reactors, viz. in near-neutral borate solutions in an autoclave at 290 °C. These samples were investigated using electrochemical impedance spectroscopy which was found to be suitable to follow in situ the corrosion process. A -CPEox∥Rox- element was used to characterise the oxide layer on Zr-1%Nb. Both the CPEox coefficient, σox, and the parallel resistance, Rox, were found to be thickness dependent. The layer thickness, however, can only be calculated after a calibration procedure. The temperature dependence of the CPEox element was also found to be anomalous while the temperature dependence of Rox indicates that the oxide layer has semiconductor properties. The relaxation time - defined as (Roxσox)1/α - was found to be quasi-independent of oxidation time and temperature; thus it is characteristic to the oxide layer on Zr-1%Nb.

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