The AMI semiempirical quantum-chemical method has been used to investigate phosphorus and boron-doped amorphous silicon. A simple relationship for the determination of midgap energy levels is proposed for substitutionally doped amorphous silicon as a function of distances between dopants.
|Number of pages||5|
|Journal||Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties|
|Publication status||Published - szept. 1997|
ASJC Scopus subject areas
- Chemical Engineering(all)
- Physics and Astronomy(all)