Impurity levels in phosphorus- and boron-doped amorphous silicon

Krisztina Kádas, Sándor Kugler

Research output: Article

2 Citations (Scopus)

Abstract

The AMI semiempirical quantum-chemical method has been used to investigate phosphorus and boron-doped amorphous silicon. A simple relationship for the determination of midgap energy levels is proposed for substitutionally doped amorphous silicon as a function of distances between dopants.

Original languageEnglish
Pages (from-to)281-285
Number of pages5
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume76
Issue number3
DOIs
Publication statusPublished - szept. 1997

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ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Physics and Astronomy(all)

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