Identification of the negative di-carbon antisite defect in n-type 4H-SiC

A. Gali, T. Umeda, E. Janzén, N. Morishita, T. Ohshima, J. Isoya

Research output: Conference contribution

Abstract

We identify the negatively charged dicarbon antisite defect (C2 core at silicon site) in electron irradiated n-type 4H-SiC by means of combined electron paramagnetic resonance (EPR) studies and first principles calculations. The pair of HEI5 and HEI6 EPR centers (S = 1/2, C1h symmetry) are associated with the cubic and hexagonal dicarbon antisite defects, respectively. This assignment is based on the comparison of the measured and calculated hyperfine tensors of 13C and 29Si atoms. We investigated the creation and annihilation of this defect as a function of electrondose and annealing temperature.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2008
Subtitle of host publicationECSCRM 2008
Pages361-364
Number of pages4
DOIs
Publication statusPublished - dec. 1 2009
Event7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 - Barcelona, Spain
Duration: szept. 7 2008szept. 11 2008

Publication series

NameMaterials Science Forum
Volume615 617
ISSN (Print)0255-5476

Other

Other7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008
CountrySpain
CityBarcelona
Period9/7/089/11/08

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Gali, A., Umeda, T., Janzén, E., Morishita, N., Ohshima, T., & Isoya, J. (2009). Identification of the negative di-carbon antisite defect in n-type 4H-SiC. In Silicon Carbide and Related Materials 2008: ECSCRM 2008 (pp. 361-364). (Materials Science Forum; Vol. 615 617). https://doi.org/10.4028/www.scientific.net/MSF.615-617.361