Identification of the negative carbon vacancy at quasi-cubic site in 4H-SIC by EPR and theoretical calculations

X. T. Trinh, K. Szász, T. Hornos, K. Kawahara, J. Suda, T. Kimoto, Á Gali, E. Janzén, N. T. Son

Research output: Conference contribution

Abstract

In freestanding n-type 4H-SiC epilayers irradiated with low-energy (250 keV) electrons at room temperature, the electron paramagnetic resonance (EPR) spectrum of the negative carbon vacancy at the hexagonal site, V- C(h), and a new signal were observed. From the similarity in defect formation and the spin-Hamiltonian parameters of the two defects, the new center is suggested to be the negative C vacancy at the quasi-cubic site, V- C (k). The identification is further supported by hyperfine calculations.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2013
PublisherTrans Tech Publications Ltd
Pages285-288
Number of pages4
ISBN (Print)9783038350101
DOIs
Publication statusPublished - jan. 1 2014
Event15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan
Duration: szept. 29 2013okt. 4 2013

Publication series

NameMaterials Science Forum
Volume778-780
ISSN (Print)0255-5476

Other

Other15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
CountryJapan
CityMiyazaki
Period9/29/1310/4/13

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Trinh, X. T., Szász, K., Hornos, T., Kawahara, K., Suda, J., Kimoto, T., Gali, Á., Janzén, E., & Son, N. T. (2014). Identification of the negative carbon vacancy at quasi-cubic site in 4H-SIC by EPR and theoretical calculations. In Silicon Carbide and Related Materials 2013 (pp. 285-288). (Materials Science Forum; Vol. 778-780). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.285