Identification of the carbon antisite-vacancy pair in 4H-SiC

T. Umeda, N. T. Son, J. Isoya, E. Janzén, T. Ohshima, N. Morishita, H. Itoh, A. Gali, M. Bockstedte

Research output: Article

77 Citations (Scopus)

Abstract

The metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the SI5 center as the carbon antisite-vacancy pair in the negative charge state (CSiVC-) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC.

Original languageEnglish
Article number145501
JournalPhysical review letters
Volume96
Issue number14
DOIs
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Umeda, T., Son, N. T., Isoya, J., Janzén, E., Ohshima, T., Morishita, N., Itoh, H., Gali, A., & Bockstedte, M. (2006). Identification of the carbon antisite-vacancy pair in 4H-SiC. Physical review letters, 96(14), [145501]. https://doi.org/10.1103/PhysRevLett.96.145501