Heteroepitaxial growth of ZnS on GaP

I. Bertóti, M. Farkas-Jahnke, E. Lendvay, T. Németh

Research output: Article

14 Citations (Scopus)

Abstract

Epitaxial layers of ZnS were grown on GaP single crystals by a chemical transport reaction. The growth process and the heterostructures obtained were investigated by X-ray diffraction and optical microscopy. It was found that the epitaxial overgrowth is polarity dependent. The formation of a transition layer at the interface between the ZnS and GaP was observed.

Original languageEnglish
Pages (from-to)699-703
Number of pages5
JournalJournal of Materials Science
Volume4
Issue number8
DOIs
Publication statusPublished - aug. 1969

Fingerprint

transition layers
Epitaxial layers
Epitaxial growth
Optical microscopy
Heterojunctions
polarity
Single crystals
microscopy
X ray diffraction
single crystals
diffraction
x rays

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)

Cite this

Bertóti, I., Farkas-Jahnke, M., Lendvay, E., & Németh, T. (1969). Heteroepitaxial growth of ZnS on GaP. Journal of Materials Science, 4(8), 699-703. https://doi.org/10.1007/BF00742426

Heteroepitaxial growth of ZnS on GaP. / Bertóti, I.; Farkas-Jahnke, M.; Lendvay, E.; Németh, T.

In: Journal of Materials Science, Vol. 4, No. 8, 08.1969, p. 699-703.

Research output: Article

Bertóti, I, Farkas-Jahnke, M, Lendvay, E & Németh, T 1969, 'Heteroepitaxial growth of ZnS on GaP', Journal of Materials Science, vol. 4, no. 8, pp. 699-703. https://doi.org/10.1007/BF00742426
Bertóti I, Farkas-Jahnke M, Lendvay E, Németh T. Heteroepitaxial growth of ZnS on GaP. Journal of Materials Science. 1969 aug.;4(8):699-703. https://doi.org/10.1007/BF00742426
Bertóti, I. ; Farkas-Jahnke, M. ; Lendvay, E. ; Németh, T. / Heteroepitaxial growth of ZnS on GaP. In: Journal of Materials Science. 1969 ; Vol. 4, No. 8. pp. 699-703.
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