The depth distribution of Si ions implanted with an energy of 40 keV into natural diamond crystals at room temperature is measured using 1. 8 MeV He ion backscattering. The crystalline SiC layer formation and structure ordering occur as a result of annealing at temperatures above 900 degree C. In addition, the annealing at 1200 degree C is followed by considerable changes of the relation between the components C and Si in the implanted layer due to the migration of atoms.
|Number of pages||8|
|Publication status||Published - jan. 1 1977|
|Event||Radiat Eff in Semicond, Invited and Contrib Pap from the Int Conf - Dubrovnik, Yugosl|
Duration: szept. 6 1976 → szept. 9 1976
|Other||Radiat Eff in Semicond, Invited and Contrib Pap from the Int Conf|
|Period||9/6/76 → 9/9/76|
ASJC Scopus subject areas