He BACKSCATTERING AND INFRARED ABSORPTION STUDIES OF NATURAL DIAMOND CONTAINING HIGH CONCENTRATIONS OF IMPLANTED SILICON.

I. P. Akimchenko, V. S. Vavilov, V. V. Krasnopevtsev, Yu V. Milyutin, J. Gyulai, G. Mezey, T. Nagy

Research output: Paper

1 Citation (Scopus)

Abstract

The depth distribution of Si ions implanted with an energy of 40 keV into natural diamond crystals at room temperature is measured using 1. 8 MeV He ion backscattering. The crystalline SiC layer formation and structure ordering occur as a result of annealing at temperatures above 900 degree C. In addition, the annealing at 1200 degree C is followed by considerable changes of the relation between the components C and Si in the implanted layer due to the migration of atoms.

Original languageEnglish
Pages354-361
Number of pages8
Publication statusPublished - jan. 1 1977
EventRadiat Eff in Semicond, Invited and Contrib Pap from the Int Conf - Dubrovnik, Yugosl
Duration: szept. 6 1976szept. 9 1976

Other

OtherRadiat Eff in Semicond, Invited and Contrib Pap from the Int Conf
CityDubrovnik, Yugosl
Period9/6/769/9/76

ASJC Scopus subject areas

  • Engineering(all)

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    Akimchenko, I. P., Vavilov, V. S., Krasnopevtsev, V. V., Milyutin, Y. V., Gyulai, J., Mezey, G., & Nagy, T. (1977). He BACKSCATTERING AND INFRARED ABSORPTION STUDIES OF NATURAL DIAMOND CONTAINING HIGH CONCENTRATIONS OF IMPLANTED SILICON.. 354-361. Paper presented at Radiat Eff in Semicond, Invited and Contrib Pap from the Int Conf, Dubrovnik, Yugosl, .