Gas mixture dependence of the LCVD of SiO2 films using an ArF laser

T. Szörényi, P. González, D. Fernández, J. Pou, B. León, M. Pérez-Amor

Research output: Article

16 Citations (Scopus)

Abstract

Large-area silica films have been deposited on silicon wafers using silane, nitrous oxide and argon gas mixtures and an ArF excimer laser in parallel configuration. An exhaustive study has been carried out on the role of the total and partial pressure of the various components of the gas mixture on the growth and the properties of silica films. Films are characterized by FT-IR spectroscopy and ellipsometry.

Original languageEnglish
Pages (from-to)206-209
Number of pages4
JournalApplied Surface Science
Volume46
Issue number1-4
DOIs
Publication statusPublished - dec. 2 1990

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ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Szörényi, T., González, P., Fernández, D., Pou, J., León, B., & Pérez-Amor, M. (1990). Gas mixture dependence of the LCVD of SiO2 films using an ArF laser. Applied Surface Science, 46(1-4), 206-209. https://doi.org/10.1016/0169-4332(90)90143-N