First principles investigation of divacancy in SiC polytypes for solid state qubit application

K. Szász, V. Ivády, E. Janzén, A. Gali

Research output: Conference contribution

4 Citations (Scopus)

Abstract

We calculated the hyperfine structure and the zero-field splitting parameters of divacancies in 3C, 4H and 6H SiC in the ground state and in the excited state for 4H SiC within the framework of density functional theory. Besides that our calculations provide identification of the defect in different polytypes, we can find some carbon atoms next to the divacancy that of the spin polarizations are similar in the ground and excited states. This coherent nuclear spin polarization phenomenon can be the base to utilize 13C spins as quantum memory.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2013
PublisherTrans Tech Publications Ltd
Pages499-502
Number of pages4
ISBN (Print)9783038350101
DOIs
Publication statusPublished - jan. 1 2014
Event15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan
Duration: szept. 29 2013okt. 4 2013

Publication series

NameMaterials Science Forum
Volume778-780
ISSN (Print)0255-5476

Other

Other15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
CountryJapan
CityMiyazaki
Period9/29/1310/4/13

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Szász, K., Ivády, V., Janzén, E., & Gali, A. (2014). First principles investigation of divacancy in SiC polytypes for solid state qubit application. In Silicon Carbide and Related Materials 2013 (pp. 499-502). (Materials Science Forum; Vol. 778-780). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.499