Amorphous carbon nitride (a-CNx) films were grown on silicon substrates by ArF excimer laser ablation of a graphite target in the presence of nitrogen at various gas pressures. By working at elevated pressures (up to 100 Pa), large amounts of nitrogen can be incorporated into the films (up to 40 at.%), which leads to a strong enhancement of their field emission properties. This behaviour was demonstrated to be mainly related to changes in the surface morphology of the samples, in connection with the development of graphite-like structures.
|Number of pages||5|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - jan. 1 2003|
ASJC Scopus subject areas
- Materials Science(all)