Excitation properties of silicon vacancy in silicon carbide

Research output: Conference contribution

2 Citations (Scopus)

Abstract

Isolated point defects possessing a high spin ground state and below-band-gap excitation may play a key role in realizing solid state quantum bits in semiconductors which are the basic building blocks of quantum computers. The silicon vacancy in silicon carbide provides these features, making it a feasible candidate in this special and emerging field of science. However, the exact nature of the luminescence of silicon vacancies detected in hexagonal polytypes has not been clarified. This is the first crucial step needed to understand this basic defect in silicon carbide. We report density functional theory based calculations on the silicon vacancy defect. Based on the obtained results we identify the silicon vacancy related photoluminescence signals with the negatively charged defect.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
Pages255-258
Number of pages4
DOIs
Publication statusPublished - máj. 28 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: szept. 11 2011szept. 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period9/11/119/16/11

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Gali, A. (2012). Excitation properties of silicon vacancy in silicon carbide. In Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 255-258). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.255