Evolution of defect and hydrogen-related low temperature photoluminescence spectra with annealing for hydrogen or helium implanted 6H SiC

F. Yan, R. P. Devaty, W. J. Choyke, A. Gali, F. Schmid, G. Pensl, G. Wagner

Research output: Conference contribution

1 Citation (Scopus)

Abstract

A set of four lightly p-type 6H SiC boule samples was implanted with H or He and annealed in isochronal stages from 950°C to 1500°C. Differences in the hydrogen, DI and DII low temperature photoluminescence spectra are observed and compared. Surprisingly, the hydrogen spectrum appears after a 1300°C anneal in the He implanted samples. A number of unidentified damage lines are also reported.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials
Pages493-496
Number of pages4
Publication statusPublished - dec. 1 2005
Event5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 - Bologna, Italy
Duration: aug. 31 2004szept. 4 2004

Publication series

NameMaterials Science Forum
Volume483-485
ISSN (Print)0255-5476

Other

Other5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
CountryItaly
CityBologna
Period8/31/049/4/04

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Yan, F., Devaty, R. P., Choyke, W. J., Gali, A., Schmid, F., Pensl, G., & Wagner, G. (2005). Evolution of defect and hydrogen-related low temperature photoluminescence spectra with annealing for hydrogen or helium implanted 6H SiC. In Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials (pp. 493-496). (Materials Science Forum; Vol. 483-485).