Evidence for phosphorus on carbon and silicon sites in 6H and 4H SiC

F. Yan, R. P. Devaty, W. J. Choyke, A. Gali, I. B. Bhat, D. J. Larkin

Research output: Conference contribution

4 Citations (Scopus)

Abstract

New lines are observed in the photoluminescence of 6H and 4H SiC epitaxial layers grown in cold wall CVD reactors and doped with phosphorus. These lines are associated with neutral phosphorus donor four particle bound exciton complexes with the phosphorus substituting on both the carbon and silicon sublattices. Assignments are made for the (h) hexagonal and (k) cubic sites of the phosphorus donor substituting on the two SiC sublattices.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
Pages585-588
Number of pages4
EditionPART 1
Publication statusPublished - dec. 1 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: szept. 18 2005szept. 23 2005

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Yan, F., Devaty, R. P., Choyke, W. J., Gali, A., Bhat, I. B., & Larkin, D. J. (2006). Evidence for phosphorus on carbon and silicon sites in 6H and 4H SiC. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 ed., pp. 585-588). (Materials Science Forum; Vol. 527-529, No. PART 1).