Epitaxy of GaN(0001) and GaN(Formula Presented.) Layers on Si(100) Substrate

V. N. Bessolov, M. E. Kompan, E. V. Konenkova, V. N. Panteleev, S. Rodin, M. P. Shcheglov

Research output: Article

Abstract

Abstract: Two different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(Formula Presented.) on a V-shaped nanostructured Si(100) substrate with nanometer-thick SiC and AlN buffer layers have been experimentally demonstrated. The GaN(0001) layers were synthesized by hydride vapor-phase epitaxy, and GaN(Formula Presented.) layers, by metal-organic vapor-phase epitaxy, with the growth completed by hydride vapor-phase epitaxy. It was shown that layers of the polar GaN(0002) have a longitudinal elastic stress of –0.45 GPa and the minimum full width at half-maximum of the X-ray diffraction rocking curve ωθ ~ 45 arcmin, whereas for the semipolar GaN(Formula Presented.), these values are –0.29 GPa and ωθ ~ 22 arcmin, respectively. A conclusion is drawn that the combined technology of semipolar gallium nitride on a silicon (100) substrate is promising.

Original languageEnglish
Pages (from-to)529-532
Number of pages4
JournalTechnical Physics Letters
Volume45
Issue number6
DOIs
Publication statusPublished - jún. 1 2019

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epitaxy
vapor phase epitaxy
hydrides
gallium nitrides
buffers
silicon
curves
diffraction
metals
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Bessolov, V. N., Kompan, M. E., Konenkova, E. V., Panteleev, V. N., Rodin, S., & Shcheglov, M. P. (2019). Epitaxy of GaN(0001) and GaN(Formula Presented.) Layers on Si(100) Substrate. Technical Physics Letters, 45(6), 529-532. https://doi.org/10.1134/S106378501906004X

Epitaxy of GaN(0001) and GaN(Formula Presented.) Layers on Si(100) Substrate. / Bessolov, V. N.; Kompan, M. E.; Konenkova, E. V.; Panteleev, V. N.; Rodin, S.; Shcheglov, M. P.

In: Technical Physics Letters, Vol. 45, No. 6, 01.06.2019, p. 529-532.

Research output: Article

Bessolov, VN, Kompan, ME, Konenkova, EV, Panteleev, VN, Rodin, S & Shcheglov, MP 2019, 'Epitaxy of GaN(0001) and GaN(Formula Presented.) Layers on Si(100) Substrate', Technical Physics Letters, vol. 45, no. 6, pp. 529-532. https://doi.org/10.1134/S106378501906004X
Bessolov, V. N. ; Kompan, M. E. ; Konenkova, E. V. ; Panteleev, V. N. ; Rodin, S. ; Shcheglov, M. P. / Epitaxy of GaN(0001) and GaN(Formula Presented.) Layers on Si(100) Substrate. In: Technical Physics Letters. 2019 ; Vol. 45, No. 6. pp. 529-532.
@article{9ae51a8fc7254bcfaa0cb865431e6df0,
title = "Epitaxy of GaN(0001) and GaN(Formula Presented.) Layers on Si(100) Substrate",
abstract = "Abstract: Two different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(Formula Presented.) on a V-shaped nanostructured Si(100) substrate with nanometer-thick SiC and AlN buffer layers have been experimentally demonstrated. The GaN(0001) layers were synthesized by hydride vapor-phase epitaxy, and GaN(Formula Presented.) layers, by metal-organic vapor-phase epitaxy, with the growth completed by hydride vapor-phase epitaxy. It was shown that layers of the polar GaN(0002) have a longitudinal elastic stress of –0.45 GPa and the minimum full width at half-maximum of the X-ray diffraction rocking curve ωθ ~ 45 arcmin, whereas for the semipolar GaN(Formula Presented.), these values are –0.29 GPa and ωθ ~ 22 arcmin, respectively. A conclusion is drawn that the combined technology of semipolar gallium nitride on a silicon (100) substrate is promising.",
keywords = "Raman scattering, semipolar gallium nitride, vapor-phase epitaxy",
author = "Bessolov, {V. N.} and Kompan, {M. E.} and Konenkova, {E. V.} and Panteleev, {V. N.} and S. Rodin and Shcheglov, {M. P.}",
year = "2019",
month = "6",
day = "1",
doi = "10.1134/S106378501906004X",
language = "English",
volume = "45",
pages = "529--532",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "6",

}

TY - JOUR

T1 - Epitaxy of GaN(0001) and GaN(Formula Presented.) Layers on Si(100) Substrate

AU - Bessolov, V. N.

AU - Kompan, M. E.

AU - Konenkova, E. V.

AU - Panteleev, V. N.

AU - Rodin, S.

AU - Shcheglov, M. P.

PY - 2019/6/1

Y1 - 2019/6/1

N2 - Abstract: Two different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(Formula Presented.) on a V-shaped nanostructured Si(100) substrate with nanometer-thick SiC and AlN buffer layers have been experimentally demonstrated. The GaN(0001) layers were synthesized by hydride vapor-phase epitaxy, and GaN(Formula Presented.) layers, by metal-organic vapor-phase epitaxy, with the growth completed by hydride vapor-phase epitaxy. It was shown that layers of the polar GaN(0002) have a longitudinal elastic stress of –0.45 GPa and the minimum full width at half-maximum of the X-ray diffraction rocking curve ωθ ~ 45 arcmin, whereas for the semipolar GaN(Formula Presented.), these values are –0.29 GPa and ωθ ~ 22 arcmin, respectively. A conclusion is drawn that the combined technology of semipolar gallium nitride on a silicon (100) substrate is promising.

AB - Abstract: Two different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(Formula Presented.) on a V-shaped nanostructured Si(100) substrate with nanometer-thick SiC and AlN buffer layers have been experimentally demonstrated. The GaN(0001) layers were synthesized by hydride vapor-phase epitaxy, and GaN(Formula Presented.) layers, by metal-organic vapor-phase epitaxy, with the growth completed by hydride vapor-phase epitaxy. It was shown that layers of the polar GaN(0002) have a longitudinal elastic stress of –0.45 GPa and the minimum full width at half-maximum of the X-ray diffraction rocking curve ωθ ~ 45 arcmin, whereas for the semipolar GaN(Formula Presented.), these values are –0.29 GPa and ωθ ~ 22 arcmin, respectively. A conclusion is drawn that the combined technology of semipolar gallium nitride on a silicon (100) substrate is promising.

KW - Raman scattering

KW - semipolar gallium nitride

KW - vapor-phase epitaxy

UR - http://www.scopus.com/inward/record.url?scp=85069202590&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85069202590&partnerID=8YFLogxK

U2 - 10.1134/S106378501906004X

DO - 10.1134/S106378501906004X

M3 - Article

AN - SCOPUS:85069202590

VL - 45

SP - 529

EP - 532

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 6

ER -