Emerging research memory and logic technologies

James A. Hutchby, George I. Bourianoff, Victor V. Zhirnov, Joe E. Brewer

Research output: Article

18 Citations (Scopus)

Abstract

The rapid cadence of metal-oxide semiconductor field-effect transistor (MOSFETs) scaling is accelerating introduction of new technologies to extend complementary metal-oxide semiconductors (CMOS) to and beyond the 32-nm technology node. This acceleration is simultaneously requiring the industry to scale CMOS to an increasingly difficult manufacturing domain well below the 45-nm node, and to invent fundamentally new approaches to information and signal processing in order to sustain functional scaling beyond the domain of CMOS. This paper introduces a set of technology relevance or evaluation criteria, and based on these criteria, offers a critical assessment of those technology entries for memory and logic being considered for post CMOS-scaling information processing. It also discusses charge-based nanoelectronics devices separately from those approaches proposing use of a new means for data representation or state variable.

Original languageEnglish
Pages (from-to)47-51
Number of pages5
JournalIEEE Circuits and Devices Magazine
Volume21
Issue number3
DOIs
Publication statusPublished - máj. 2005

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Electrical and Electronic Engineering

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