Ellipsometric study of SiNx/nc-Si/SiNx multilayers

Peter Basa, Peter Petrik

Research output: Conference contribution

Abstract

Low pressure chemical vapour deposited and annealed SiNx/nc-Si/ SiNx layers preapred on Si substrates were characterized by spectrocopic ellipsometry. The effective medium approximation model was used to obtain the thickness, the composition and homogeneity of the layers. A significant effect of the deposition time and annealing process was obtained.

Original languageEnglish
Title of host publicationProceedings - 2005 International Semiconductor Conference, CAS 2005
Pages417-420
Number of pages4
DOIs
Publication statusPublished - dec. 1 2005
Event2005 International Semiconductor Conference, CAS 2005 - Sinaia, Romania
Duration: okt. 3 2005okt. 5 2005

Publication series

NameProceedings of the International Semiconductor Conference, CAS
Volume2

Other

Other2005 International Semiconductor Conference, CAS 2005
CountryRomania
CitySinaia
Period10/3/0510/5/05

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Basa, P., & Petrik, P. (2005). Ellipsometric study of SiNx/nc-Si/SiNx multilayers. In Proceedings - 2005 International Semiconductor Conference, CAS 2005 (pp. 417-420). [1558815] (Proceedings of the International Semiconductor Conference, CAS; Vol. 2). https://doi.org/10.1109/SMICND.2005.1558815