Electronic structure of doped fourfold coordinated amorphous semiconductors. Midgap states in amorphous carbon

K. Kadas, G. G. Ferenczy

Research output: Article

3 Citations (Scopus)

Abstract

Midgap states have been studied in phosphorus-doped, tetrahedrally coordinated amorphous carbon by means of the Fragment Self-Consistent Field method (FSCF). It has been found that the midgap energy levels are primarily determined by the relative position of dopants. A simple linear correlation has been obtained between the highest occupied molecular orbital (HOMO) energy of the model clusters and the inverse distance of impurities.

Original languageEnglish
Pages (from-to)175-180
Number of pages6
JournalJournal of Molecular Structure: THEOCHEM
Volume463
Issue number1-2
DOIs
Publication statusPublished - ápr. 23 1999

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ASJC Scopus subject areas

  • Biochemistry
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry

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