Electronic configuration of tungsten in 4H-, 6H-, and 15R-SiC

A. Gällström, B. Magnusson, F. C. Beyer, A. Gali, N. T. Son, S. Leone, I. G. Ivanov, A. Henry, C. G. Hemmingsson, E. Janzén

Research output: Conference contribution

Abstract

A commonly observed unidentified photoluminescence center in SiC is UD-1. In this report, the UD-1 center is identified to be tungsten related. The identification is based on (i) a W-doping study, the confirmation of W in the samples was made using deep level transient spectroscopy (DLTS), (ii) the optical activation energy of the absorption of UD-1 in weakly n-type samples corresponds to the activation energy of the deep tungsten center observed using DLTS. The tungsten-related optical centers are reported in 4H-, 6H-, and 15R-SiC. Further, a crystal field model for a tungsten atom occupying a Si-site is suggested. This crystal field model is in agreement with the experimental data available: polarization, temperature dependence and magnetic field splitting.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
Pages211-216
Number of pages6
DOIs
Publication statusPublished - máj. 28 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: szept. 11 2011szept. 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period9/11/119/16/11

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Electronic configuration of tungsten in 4H-, 6H-, and 15R-SiC'. Together they form a unique fingerprint.

  • Cite this

    Gällström, A., Magnusson, B., Beyer, F. C., Gali, A., Son, N. T., Leone, S., Ivanov, I. G., Henry, A., Hemmingsson, C. G., & Janzén, E. (2012). Electronic configuration of tungsten in 4H-, 6H-, and 15R-SiC. In Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 211-216). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.211