Electrochemical migration of Cu and Sn in Na2SO4 environment

Bálint Medgyes, Péter Szabó, Patrik Tamási, László Gál, G. Harsányi

Research output: Conference contribution

1 Citation (Scopus)

Abstract

The effect of Na2SO4 concentration on electrochemical migration (ECM) of copper and tin was investigated applying an in-situ optical and real-time electrical inspection system. According to the Mean-Time-To-Failure (MTTF) values, the ECM susceptibility of copper has increased at low concentration levels. However, the ECM susceptibility of copper has decreased at the medium and stopped at the high and even saturated concentration levels. On the other hand, the ECM susceptibility of tin has increased at low levels. Afterwards the ECM ability of tin was hindered and even stopped at medium level. Interestingly, the ECM susceptibility of tin was reappeared at high concentration levels.

Original languageEnglish
Title of host publication2016 39th International Spring Seminar on Electronics Technology, ISSE 2016
PublisherIEEE Computer Society
Pages232-236
Number of pages5
Volume2016-September
ISBN (Electronic)9781509013890
DOIs
Publication statusPublished - szept. 7 2016
Event39th International Spring Seminar on Electronics Technology, ISSE 2016 - Pilsen, Czech Republic
Duration: máj. 18 2016máj. 22 2016

Other

Other39th International Spring Seminar on Electronics Technology, ISSE 2016
CountryCzech Republic
CityPilsen
Period5/18/165/22/16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Fingerprint Dive into the research topics of 'Electrochemical migration of Cu and Sn in Na<sub>2</sub>SO<sub>4</sub> environment'. Together they form a unique fingerprint.

  • Cite this

    Medgyes, B., Szabó, P., Tamási, P., Gál, L., & Harsányi, G. (2016). Electrochemical migration of Cu and Sn in Na2SO4 environment. In 2016 39th International Spring Seminar on Electronics Technology, ISSE 2016 (Vol. 2016-September, pp. 232-236). [7563195] IEEE Computer Society. https://doi.org/10.1109/ISSE.2016.7563195