Electrical properties of polysilicon n+-i-p junctions

C. A. Dimitriadis, L. Papadimitriou, L. Dózsa, P. A. Coxon

Research output: Article

1 Citation (Scopus)

Abstract

The current-voltage (I-V) characteristics, the frequency and temperature dependence of the capacitance and deep-level transient spectroscopy measurements in n+-i-p polysilicon junctions are investigated. All the polysilicon junctions underwent the same fabrication process except for the ion-implantation step. From the analysis of the experimental results information about the structure and defects of the undoped polysilicon material are obtained. At a low injection level of electrons the diode current is controlled by the distribution in energy grain boundary states and the structure of the deep centres change, after application of high (10 mA) injection level of electrons, to the single trap 0.182 eV.

Original languageEnglish
Article number008
Pages (from-to)558-563
Number of pages6
JournalSemiconductor Science and Technology
Volume3
Issue number6
DOIs
Publication statusPublished - 1988

Fingerprint

p-i-n junctions
Polysilicon
Electric properties
electrical properties
injection
Deep level transient spectroscopy
Electrons
Ion implantation
ion implantation
Grain boundaries
Diodes
electrons
Capacitance
grain boundaries
capacitance
diodes
traps
Fabrication
Defects
temperature dependence

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Electrical properties of polysilicon n+-i-p junctions. / Dimitriadis, C. A.; Papadimitriou, L.; Dózsa, L.; Coxon, P. A.

In: Semiconductor Science and Technology, Vol. 3, No. 6, 008, 1988, p. 558-563.

Research output: Article

Dimitriadis, C. A. ; Papadimitriou, L. ; Dózsa, L. ; Coxon, P. A. / Electrical properties of polysilicon n+-i-p junctions. In: Semiconductor Science and Technology. 1988 ; Vol. 3, No. 6. pp. 558-563.
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