Electrical and Photoelectrical Characteristics of с-Si/Porous–Si/CdS Heterojunctions

H. M. Mamedov, A. Kukevecz, Z. Konya, K. Kordas, S. I. Shah, V. U. Mamedov, Kh M. Ahmedova, V. J. Mamedova, R. M. Rzaev, Sh A. Shamilova, E. A. Khanmamedova, L. E. Agazade

Research output: Article

1 Citation (Scopus)

Abstract

Depending on the sizes of the CdS crystallites and silicon pores, electrical and photoelectrical characteristics of c-Si/porous–Si/CdS heterojunctions prepared by electrochemical deposition and anodization, respectively, are studied. The optimal pore size (10–16 nm) is determined, which provides the maximum photoelectric conversion efficiency (7.71%) of heterojunctions.

Original languageEnglish
Pages (from-to)1660-1666
Number of pages7
JournalRussian Physics Journal
Volume61
Issue number9
DOIs
Publication statusPublished - jan. 1 2019

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Mamedov, H. M., Kukevecz, A., Konya, Z., Kordas, K., Shah, S. I., Mamedov, V. U., Ahmedova, K. M., Mamedova, V. J., Rzaev, R. M., Shamilova, S. A., Khanmamedova, E. A., & Agazade, L. E. (2019). Electrical and Photoelectrical Characteristics of с-Si/Porous–Si/CdS Heterojunctions. Russian Physics Journal, 61(9), 1660-1666. https://doi.org/10.1007/s11182-018-1584-2