Electrical and low frequency noise properties of Gd and GdCo silicide contacts on n-type Si

L. Dózsa, Z. Horváth, G. Molnár, G. Pető, C. A. Dimitriadis, L. Papadimitriou, J. Brini, G. Kamarinos

Research output: Article

1 Citation (Scopus)

Abstract

Gd and GdCo layers were evaporated onto n-type silicon and silicides were formed by in situ annealing at 400 and 700 °C. The electrical properties of the resulting Schottky diodes were investigated by current-voltage, capacitance-voltage and low frequency noise measurements. The Gd/Si contacts shows an ohmic behaviour for both annealing temperatures, while the GdCo/Si contacts show a rectifying behaviour with a high (approximately 0.65 eV) and a low (approximately 0.52 eV) Schottky barrier height for the annealing temperatures of 400 and 700 °C, respectively. It was found that Co retards the Gd-Si reaction and reduces the density of the donor-type point defects generated within the silicon subtrate during the Gd silicidation process.

Original languageEnglish
Pages (from-to)653-657
Number of pages5
JournalSemiconductor Science and Technology
Volume15
Issue number7
DOIs
Publication statusPublished - júl. 2000

Fingerprint

Silicon
Annealing
low frequencies
annealing
Silicides
silicides
Electric potential
electric potential
silicon
Point defects
noise measurement
Schottky diodes
point defects
Diodes
Electric properties
Capacitance
capacitance
electrical properties
Temperature
temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Electrical and low frequency noise properties of Gd and GdCo silicide contacts on n-type Si. / Dózsa, L.; Horváth, Z.; Molnár, G.; Pető, G.; Dimitriadis, C. A.; Papadimitriou, L.; Brini, J.; Kamarinos, G.

In: Semiconductor Science and Technology, Vol. 15, No. 7, 07.2000, p. 653-657.

Research output: Article

@article{1fdc807d164f4265adac2e8ef6ac79a9,
title = "Electrical and low frequency noise properties of Gd and GdCo silicide contacts on n-type Si",
abstract = "Gd and GdCo layers were evaporated onto n-type silicon and silicides were formed by in situ annealing at 400 and 700 °C. The electrical properties of the resulting Schottky diodes were investigated by current-voltage, capacitance-voltage and low frequency noise measurements. The Gd/Si contacts shows an ohmic behaviour for both annealing temperatures, while the GdCo/Si contacts show a rectifying behaviour with a high (approximately 0.65 eV) and a low (approximately 0.52 eV) Schottky barrier height for the annealing temperatures of 400 and 700 °C, respectively. It was found that Co retards the Gd-Si reaction and reduces the density of the donor-type point defects generated within the silicon subtrate during the Gd silicidation process.",
author = "L. D{\'o}zsa and Z. Horv{\'a}th and G. Moln{\'a}r and G. Pető and Dimitriadis, {C. A.} and L. Papadimitriou and J. Brini and G. Kamarinos",
year = "2000",
month = "7",
doi = "10.1088/0268-1242/15/7/302",
language = "English",
volume = "15",
pages = "653--657",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "7",

}

TY - JOUR

T1 - Electrical and low frequency noise properties of Gd and GdCo silicide contacts on n-type Si

AU - Dózsa, L.

AU - Horváth, Z.

AU - Molnár, G.

AU - Pető, G.

AU - Dimitriadis, C. A.

AU - Papadimitriou, L.

AU - Brini, J.

AU - Kamarinos, G.

PY - 2000/7

Y1 - 2000/7

N2 - Gd and GdCo layers were evaporated onto n-type silicon and silicides were formed by in situ annealing at 400 and 700 °C. The electrical properties of the resulting Schottky diodes were investigated by current-voltage, capacitance-voltage and low frequency noise measurements. The Gd/Si contacts shows an ohmic behaviour for both annealing temperatures, while the GdCo/Si contacts show a rectifying behaviour with a high (approximately 0.65 eV) and a low (approximately 0.52 eV) Schottky barrier height for the annealing temperatures of 400 and 700 °C, respectively. It was found that Co retards the Gd-Si reaction and reduces the density of the donor-type point defects generated within the silicon subtrate during the Gd silicidation process.

AB - Gd and GdCo layers were evaporated onto n-type silicon and silicides were formed by in situ annealing at 400 and 700 °C. The electrical properties of the resulting Schottky diodes were investigated by current-voltage, capacitance-voltage and low frequency noise measurements. The Gd/Si contacts shows an ohmic behaviour for both annealing temperatures, while the GdCo/Si contacts show a rectifying behaviour with a high (approximately 0.65 eV) and a low (approximately 0.52 eV) Schottky barrier height for the annealing temperatures of 400 and 700 °C, respectively. It was found that Co retards the Gd-Si reaction and reduces the density of the donor-type point defects generated within the silicon subtrate during the Gd silicidation process.

UR - http://www.scopus.com/inward/record.url?scp=0343443031&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343443031&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/15/7/302

DO - 10.1088/0268-1242/15/7/302

M3 - Article

AN - SCOPUS:0343443031

VL - 15

SP - 653

EP - 657

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 7

ER -