Effect of the substrate temperature on the physical characteristics of amorphous carbon films deposited by d.c. magnetron sputtering

E. Mounier, F. Bertin, M. Adamik, Y. Pauleau, P. Barna

Research output: Article

45 Citations (Scopus)

Abstract

The growth rate, composition, electrical resistivity, mass density, refractive index and microstructure of amorphous carbon (a-C) films prepared by direct current (d.c.) magnetron sputtering were investigated as functions of the substrate temperature (50-350°C). The hydrogen content determined by elastic recoil detection analysis (ERDA) and the electrical resistivity of films were found to be dependent on both the base pressure in the deposition chamber and substrate temperature. For films deposited below 200°C, the hydrogen content was less than 2 at.% and the substrate temperature was the only parameter which affected their electrical resistivity. The electrical resistivity decreased from 0.2 to 0.03 Ωcm as the substrate temperature increased from 50 to 200°C. The mass density of films evaluated from Rutherford backscattering (RBS) data and film thickness decreased from 2.2 to 1.4 g cm-3 with increasing substrate temperature. A linear relationship between the refractive index and the mass density of a-C films was clearly established. From the optical measurements, the decrease in mass density was correlated to an increase in porosity of films with increasing substrate temperature. The decrease in electrical resistivity with increasing substrate temperature was attributed to a graphitization of a-C films. This modification of the microstructure of a-C films as the deposition temperature was varied from 50 to 350°C was observed by examination of the cross-section of samples by transmission electron microscopy and Raman spectroscopic analyses of a-C films.

Original languageEnglish
Pages (from-to)1509-1515
Number of pages7
JournalDiamond and Related Materials
Volume5
Issue number12
DOIs
Publication statusPublished - dec. 1996

Fingerprint

Carbon films
Amorphous carbon
Amorphous films
Magnetron sputtering
magnetron sputtering
direct current
carbon
Substrates
electrical resistivity
Temperature
temperature
Hydrogen
Refractive index
refractivity
Microstructure
Graphitization
base pressure
Rutherford backscattering spectroscopy
microstructure
graphitization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

@article{10f1cb9e1ede4e86b35ae98f23952f32,
title = "Effect of the substrate temperature on the physical characteristics of amorphous carbon films deposited by d.c. magnetron sputtering",
abstract = "The growth rate, composition, electrical resistivity, mass density, refractive index and microstructure of amorphous carbon (a-C) films prepared by direct current (d.c.) magnetron sputtering were investigated as functions of the substrate temperature (50-350°C). The hydrogen content determined by elastic recoil detection analysis (ERDA) and the electrical resistivity of films were found to be dependent on both the base pressure in the deposition chamber and substrate temperature. For films deposited below 200°C, the hydrogen content was less than 2 at.{\%} and the substrate temperature was the only parameter which affected their electrical resistivity. The electrical resistivity decreased from 0.2 to 0.03 Ωcm as the substrate temperature increased from 50 to 200°C. The mass density of films evaluated from Rutherford backscattering (RBS) data and film thickness decreased from 2.2 to 1.4 g cm-3 with increasing substrate temperature. A linear relationship between the refractive index and the mass density of a-C films was clearly established. From the optical measurements, the decrease in mass density was correlated to an increase in porosity of films with increasing substrate temperature. The decrease in electrical resistivity with increasing substrate temperature was attributed to a graphitization of a-C films. This modification of the microstructure of a-C films as the deposition temperature was varied from 50 to 350°C was observed by examination of the cross-section of samples by transmission electron microscopy and Raman spectroscopic analyses of a-C films.",
keywords = "Amorphous carbon, Characterization, Microstructure, Physical vapor deposition",
author = "E. Mounier and F. Bertin and M. Adamik and Y. Pauleau and P. Barna",
year = "1996",
month = "12",
doi = "10.1016/S0925-9635(96)00575-4",
language = "English",
volume = "5",
pages = "1509--1515",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "12",

}

TY - JOUR

T1 - Effect of the substrate temperature on the physical characteristics of amorphous carbon films deposited by d.c. magnetron sputtering

AU - Mounier, E.

AU - Bertin, F.

AU - Adamik, M.

AU - Pauleau, Y.

AU - Barna, P.

PY - 1996/12

Y1 - 1996/12

N2 - The growth rate, composition, electrical resistivity, mass density, refractive index and microstructure of amorphous carbon (a-C) films prepared by direct current (d.c.) magnetron sputtering were investigated as functions of the substrate temperature (50-350°C). The hydrogen content determined by elastic recoil detection analysis (ERDA) and the electrical resistivity of films were found to be dependent on both the base pressure in the deposition chamber and substrate temperature. For films deposited below 200°C, the hydrogen content was less than 2 at.% and the substrate temperature was the only parameter which affected their electrical resistivity. The electrical resistivity decreased from 0.2 to 0.03 Ωcm as the substrate temperature increased from 50 to 200°C. The mass density of films evaluated from Rutherford backscattering (RBS) data and film thickness decreased from 2.2 to 1.4 g cm-3 with increasing substrate temperature. A linear relationship between the refractive index and the mass density of a-C films was clearly established. From the optical measurements, the decrease in mass density was correlated to an increase in porosity of films with increasing substrate temperature. The decrease in electrical resistivity with increasing substrate temperature was attributed to a graphitization of a-C films. This modification of the microstructure of a-C films as the deposition temperature was varied from 50 to 350°C was observed by examination of the cross-section of samples by transmission electron microscopy and Raman spectroscopic analyses of a-C films.

AB - The growth rate, composition, electrical resistivity, mass density, refractive index and microstructure of amorphous carbon (a-C) films prepared by direct current (d.c.) magnetron sputtering were investigated as functions of the substrate temperature (50-350°C). The hydrogen content determined by elastic recoil detection analysis (ERDA) and the electrical resistivity of films were found to be dependent on both the base pressure in the deposition chamber and substrate temperature. For films deposited below 200°C, the hydrogen content was less than 2 at.% and the substrate temperature was the only parameter which affected their electrical resistivity. The electrical resistivity decreased from 0.2 to 0.03 Ωcm as the substrate temperature increased from 50 to 200°C. The mass density of films evaluated from Rutherford backscattering (RBS) data and film thickness decreased from 2.2 to 1.4 g cm-3 with increasing substrate temperature. A linear relationship between the refractive index and the mass density of a-C films was clearly established. From the optical measurements, the decrease in mass density was correlated to an increase in porosity of films with increasing substrate temperature. The decrease in electrical resistivity with increasing substrate temperature was attributed to a graphitization of a-C films. This modification of the microstructure of a-C films as the deposition temperature was varied from 50 to 350°C was observed by examination of the cross-section of samples by transmission electron microscopy and Raman spectroscopic analyses of a-C films.

KW - Amorphous carbon

KW - Characterization

KW - Microstructure

KW - Physical vapor deposition

UR - http://www.scopus.com/inward/record.url?scp=0000741444&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000741444&partnerID=8YFLogxK

U2 - 10.1016/S0925-9635(96)00575-4

DO - 10.1016/S0925-9635(96)00575-4

M3 - Article

AN - SCOPUS:0000741444

VL - 5

SP - 1509

EP - 1515

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 12

ER -