Effect of nitrogen doping on photoresponsivity of ZnO films

A. I. Ievtushenko, G. V. Lashkarev, V. I. Lazorenko, V. A. Karpyna, M. G. Dusheyko, V. M. Tkach, L. A. Kosyachenko, V. M. Sklyarchuk, O. F. Sklyarchuk, K. A. Avramenko, V. V. Strelchuk, Z. J. Horvath

Research output: Article

14 Citations (Scopus)


Investigations of photoelectrical properties of ZnO films are important scientific task for designing UV detectors for various applications. We report the positive role of nitrogen doping in increasing photoresponsivity of ZnO:N-based detectors. It is suggested that nitrogen slightly deteriorates the structural quality of ZnO films and compensates intrinsic defects that increase photoresponsivity. Also, the spectral response of Ni/ZnO:N/n+-Si structures at different biases were considered. (Graph presented).

Original languageEnglish
Pages (from-to)1746-1750
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number7
Publication statusPublished - júl. 1 2010

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Ievtushenko, A. I., Lashkarev, G. V., Lazorenko, V. I., Karpyna, V. A., Dusheyko, M. G., Tkach, V. M., Kosyachenko, L. A., Sklyarchuk, V. M., Sklyarchuk, O. F., Avramenko, K. A., Strelchuk, V. V., & Horvath, Z. J. (2010). Effect of nitrogen doping on photoresponsivity of ZnO films. Physica Status Solidi (A) Applications and Materials Science, 207(7), 1746-1750. https://doi.org/10.1002/pssa.200983750