Effect of hydrostatic pressure on crystallization and decomposition in amorphous Si/SiSb/Si system

Z. Papp, A. Csík, G. Erdélyi, G. Langer, D. Beke, L. Daróczi, A. Simon, K. Kapta

Research output: Article

3 Citations (Scopus)

Abstract

The crystallization of amorphous SiSb mono-, Si/SiSb/Si tri- and Si/SiSb multilayers, carried out at 883K under different hydrostatic pressures has been investigated by cross-sectional transmission electron microscopy (TEM). After annealing crystallization of the amorphous SiSb layer was observed, while the pure Si layer remained amorphous. It was observed that hydrostatic pressure and the initial Sb concentration enhance crystallization and decomposition processes. In the case of the Si/SiSb/Si trilayer films, the nanocrystalline SiSb layer underwent a spinodal-like decomposition resulting in straight stripes parallel to the surface.

Original languageEnglish
Pages (from-to)273-277
Number of pages5
JournalVacuum
Volume71
Issue number1-2 SPEC.
DOIs
Publication statusPublished - máj. 9 2003

Fingerprint

Hydrostatic pressure
Crystallization
hydrostatic pressure
crystallization
Decomposition
decomposition
Monocrystalline silicon
Multilayers
Annealing
Transmission electron microscopy
transmission electron microscopy
annealing

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Effect of hydrostatic pressure on crystallization and decomposition in amorphous Si/SiSb/Si system. / Papp, Z.; Csík, A.; Erdélyi, G.; Langer, G.; Beke, D.; Daróczi, L.; Simon, A.; Kapta, K.

In: Vacuum, Vol. 71, No. 1-2 SPEC., 09.05.2003, p. 273-277.

Research output: Article

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AU - Papp, Z.

AU - Csík, A.

AU - Erdélyi, G.

AU - Langer, G.

AU - Beke, D.

AU - Daróczi, L.

AU - Simon, A.

AU - Kapta, K.

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KW - Crystallization

KW - Hydrostatic pressure

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