Determination of the thickness and density of the ion bombardment induced altered layer in SiC by means of reflection electron energy loss study

L. Kotis, A. Sulyok, M. Menyhard, J. B. Malherbe, R. Q. Odendaal

Research output: Article

4 Citations (Scopus)

Abstract

The steady state surfaces of ion bombarded 3C-, 4H- and 6H-SiC samples were studied by means of reflected electron energy loss spectroscopy (REELS). The REELS exhibit a well-defined loss peak in the region of about 20 eV. The position of the maximum of the loss peak depends on the bombarding ion energy (decreasing with increasing ion energy), and on the primary electron beam energy (increasing with increasing primary energy). This behavior can be explained if we suppose that the plasmon energy in the altered layer (produced by ion bombardment) is different from that of the unaltered bulk. In this case the measured loss peak is the sum of two overlapping plasmon peaks. With modeling the system as a homogeneous altered layer and a homogeneous unaltered substrate the plasmon energy in the altered layer was derived to be 19.8 eV. The large change of the plasmon energy with respect to the bulk value of 23 eV is explained by a thin low density overlayer on the surface of the sample produced by the ion bombardment.

Original languageEnglish
Pages (from-to)1785-1792
Number of pages8
JournalApplied Surface Science
Volume252
Issue number5
DOIs
Publication statusPublished - dec. 15 2005

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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