Determination of lattice parameters in the epitaxial AlSb/GaSb system by high resolution X-ray diffraction

C. Bocchi, A. Bosacchi, C. Ferrari, S. Franchi, P. Franzosi, R. Magnanini, L. Nasi

Research output: Article

21 Citations (Scopus)

Abstract

(001)-oriented AlSb/GaSb heterostructures grown by molecular beam epitaxy under optimized conditions have been studied by high resolution X-ray diffraction (HRXRD) in order to measure the lattice parameter aAlSb and the Poisson ratio ν[001]AlSb of epitaxial AlSb with high accuracy. The knowledge of these parameters is a prerequisite for the measurement of the composition of Al1-xGaxSb ternary solutions by means of X-ray diffractometry. The thicknesses of AlSb layers have been chosen so as to result in pseudomorphic and almost completely relaxed layers. The HRXRD investigations have been carried out using the 004, 335 and 117 reflecting planes, as well as the near vertical 551 reflecting planes, with a symmetrical beam path, which give high sensitivity to the parallel component of mismatch. The data on epitaxial AlSb (aAlSb = 6.1353 ± 0.0003 Å and ν[001]AlSb = 0.328 ± 0.005) are in excellent agreement with the previously published data, but have better accuracy and reliability.

Original languageEnglish
Pages (from-to)8-14
Number of pages7
JournalJournal of Crystal Growth
Volume165
Issue number1-2
Publication statusPublished - júl. 1996

Fingerprint

Lattice constants
lattice parameters
X ray diffraction
high resolution
Poisson ratio
diffraction
Molecular beam epitaxy
X ray diffraction analysis
Heterojunctions
x rays
molecular beam epitaxy
Chemical analysis
sensitivity

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Bocchi, C., Bosacchi, A., Ferrari, C., Franchi, S., Franzosi, P., Magnanini, R., & Nasi, L. (1996). Determination of lattice parameters in the epitaxial AlSb/GaSb system by high resolution X-ray diffraction. Journal of Crystal Growth, 165(1-2), 8-14.

Determination of lattice parameters in the epitaxial AlSb/GaSb system by high resolution X-ray diffraction. / Bocchi, C.; Bosacchi, A.; Ferrari, C.; Franchi, S.; Franzosi, P.; Magnanini, R.; Nasi, L.

In: Journal of Crystal Growth, Vol. 165, No. 1-2, 07.1996, p. 8-14.

Research output: Article

Bocchi, C, Bosacchi, A, Ferrari, C, Franchi, S, Franzosi, P, Magnanini, R & Nasi, L 1996, 'Determination of lattice parameters in the epitaxial AlSb/GaSb system by high resolution X-ray diffraction', Journal of Crystal Growth, vol. 165, no. 1-2, pp. 8-14.
Bocchi, C. ; Bosacchi, A. ; Ferrari, C. ; Franchi, S. ; Franzosi, P. ; Magnanini, R. ; Nasi, L. / Determination of lattice parameters in the epitaxial AlSb/GaSb system by high resolution X-ray diffraction. In: Journal of Crystal Growth. 1996 ; Vol. 165, No. 1-2. pp. 8-14.
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AU - Ferrari, C.

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AU - Franzosi, P.

AU - Magnanini, R.

AU - Nasi, L.

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