Dependence of nitrogen content and deposition rate on nitrogen pressure and laser parameters in ArF excimer laser deposition of carbon nitride films

T. Szörényi, F. Antoni, E. Fogarassy, I. Bertóti

Research output: Article

19 Citations (Scopus)

Abstract

The effect of N2 pressure and laser fluence on the chemical composition and growth rate of CNx (0.07<x<0.45) films deposited by ArF excimer laser ablation of a graphite target in nitrogen environment is reported. Between 1 and 50 Pa the nitrogen content of the films monotonously increases with increasing pressure. Films deposited at various N2 pressures differ not only in their (average) nitrogen but also in their oxygen content. The chemical composition of the films deposited using pulses of fluences between 0.7 and 2 J cm-2 remains the same within experimental error, while in the 2-10 J cm-2 domain the nitrogen incorporation steeply increases. The growth rates vary from 0.003 to 0.56 angstroms/pulse, increasing linearly with fluence and decreasing with increasing pressure in the 0.7-2 J cm-2 fluence domain, while followed by a supralinear dependence on fluence and less sensitivity to N2 pressure at higher fluences. Changes in film porosity account for the striking features reported.

Original languageEnglish
Pages (from-to)248-250
Number of pages3
JournalApplied Surface Science
Volume168
Issue number1-4
DOIs
Publication statusPublished - dec. 15 2000

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ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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