Density functional theory on NV center in 4H SiC

András Csóré, Gali

Research output: Conference contribution

1 Citation (Scopus)

Abstract

Paramagnetic defects in solids have become attractive systems for quantum computing as well as magnetometry in recent years. One of the leading contenders is the negatively charged nitrogen-vacancy defect (NV center) in diamond proposed to be highly promising with respect the afore-mentioned applications. In our study we investigate the NCVSi defect in 3C, 4H and 6H SiC as alternative choices with superior properties. Electronic structure of NV center in SiC exhibits S = 1 triplet ground state with the possibility of optical spin polarization. On the other hand, our results obtained by density functional theory calculations may contribute to unambiguously identify the possible defect configurations.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2016
EditorsKonstantinos Zekentes, Konstantinos Zekentes, Konstantin V. Vasilevskiy, Nikolaos Frangis
PublisherTrans Tech Publications Ltd
Pages269-274
Number of pages6
ISBN (Print)9783035710434
DOIs
Publication statusPublished - jan. 1 2017
Event11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 - Halkidiki, Greece
Duration: szept. 25 2016szept. 29 2016

Publication series

NameMaterials Science Forum
Volume897 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016
CountryGreece
CityHalkidiki
Period9/25/169/29/16

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Density functional theory on NV center in 4H SiC'. Together they form a unique fingerprint.

  • Cite this

    Csóré, A., & Gali (2017). Density functional theory on NV center in 4H SiC. In K. Zekentes, K. Zekentes, K. V. Vasilevskiy, & N. Frangis (Eds.), Silicon Carbide and Related Materials 2016 (pp. 269-274). (Materials Science Forum; Vol. 897 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.897.269