Defects introduced by electron-irradiation at low temperatures in SiC

N. T. Son, J. Isoya, N. Morishita, T. Ohshima, H. Itoh, A. Gali, E. Janzén

Research output: Conference contribution

2 Citations (Scopus)

Abstract

Defects introduced by electron irradiation at ∼80-100 K in 3C-, 4H- and 6H-SiC were studied by electron paramagnetic resonance (EPR). A number of EPR spectra, labelled LE1-10, were detected. Combining EPR and supercell calculations, we will show that the LE1 center in 3C-SiC with C2v symmetry and an electron spin S=3/2 is related to the (VSi-Si i)3+ Frenkel pair between the silicon vacancy and a second neighbour Sii interstitial along the <100> direction. Results on other centers, possibly also related to interstitials, are discussed.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2008
Subtitle of host publicationECSCRM 2008
Pages377-380
Number of pages4
DOIs
Publication statusPublished - dec. 1 2009
Event7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 - Barcelona, Spain
Duration: szept. 7 2008szept. 11 2008

Publication series

NameMaterials Science Forum
Volume615 617
ISSN (Print)0255-5476

Other

Other7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008
CountrySpain
CityBarcelona
Period9/7/089/11/08

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Son, N. T., Isoya, J., Morishita, N., Ohshima, T., Itoh, H., Gali, A., & Janzén, E. (2009). Defects introduced by electron-irradiation at low temperatures in SiC. In Silicon Carbide and Related Materials 2008: ECSCRM 2008 (pp. 377-380). (Materials Science Forum; Vol. 615 617). https://doi.org/10.4028/www.scientific.net/MSF.615-617.377