Defects in SiC: Theory

Research output: Conference contribution

Abstract

A brief overview about the recent progress in developing the methods to calculate the properties of defects in solids is given and some recent examples on vacancy-related defects in SiC are presented.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2010
Pages225-232
Number of pages8
DOIs
Publication statusPublished - ápr. 28 2011
Event8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010 - Oslo, Norway
Duration: aug. 29 2010szept. 2 2010

Publication series

NameMaterials Science Forum
Volume679-680
ISSN (Print)0255-5476

Other

Other8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010
CountryNorway
CityOslo
Period8/29/109/2/10

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Gali, A. (2011). Defects in SiC: Theory. In Silicon Carbide and Related Materials 2010 (pp. 225-232). (Materials Science Forum; Vol. 679-680). https://doi.org/10.4028/www.scientific.net/MSF.679-680.225