DAMAGE AND TRAPPING BEHAVIOUR OF CRYSTALLINE SILICON AT LOW ENERGY DEUTERIUM IMPLANTATION.

D. Hildebrandt, H. Strusny, R. Groetzschel, E. Kotai, F. Pászti

Research output: Article

2 Citations (Scopus)

Abstract

Si samples were irradiated at energies from 25 to 2500 eV per nucleon and fluences from 5 multiplied by 10**1**5 to 5 multiplied by 10**1**7 D/cm**2 to compare trapping and damage behavior.

Original languageEnglish
JournalPhysica Status Solidi (A) Applied Research
Volume85
Issue number1
Publication statusPublished - jan. 1 1984

Fingerprint

Deuterium
Silicon
deuterium
implantation
fluence
trapping
Crystalline materials
damage
silicon
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

DAMAGE AND TRAPPING BEHAVIOUR OF CRYSTALLINE SILICON AT LOW ENERGY DEUTERIUM IMPLANTATION. / Hildebrandt, D.; Strusny, H.; Groetzschel, R.; Kotai, E.; Pászti, F.

In: Physica Status Solidi (A) Applied Research, Vol. 85, No. 1, 01.01.1984.

Research output: Article

@article{d8069380cb774319af4c3e7780616c00,
title = "DAMAGE AND TRAPPING BEHAVIOUR OF CRYSTALLINE SILICON AT LOW ENERGY DEUTERIUM IMPLANTATION.",
abstract = "Si samples were irradiated at energies from 25 to 2500 eV per nucleon and fluences from 5 multiplied by 10**1**5 to 5 multiplied by 10**1**7 D/cm**2 to compare trapping and damage behavior.",
author = "D. Hildebrandt and H. Strusny and R. Groetzschel and E. Kotai and F. P{\'a}szti",
year = "1984",
month = "1",
day = "1",
language = "English",
volume = "85",
journal = "Physica Status Solidi (A) Applied Research",
issn = "0031-8965",
publisher = "Wiley-VCH Verlag",
number = "1",

}

TY - JOUR

T1 - DAMAGE AND TRAPPING BEHAVIOUR OF CRYSTALLINE SILICON AT LOW ENERGY DEUTERIUM IMPLANTATION.

AU - Hildebrandt, D.

AU - Strusny, H.

AU - Groetzschel, R.

AU - Kotai, E.

AU - Pászti, F.

PY - 1984/1/1

Y1 - 1984/1/1

N2 - Si samples were irradiated at energies from 25 to 2500 eV per nucleon and fluences from 5 multiplied by 10**1**5 to 5 multiplied by 10**1**7 D/cm**2 to compare trapping and damage behavior.

AB - Si samples were irradiated at energies from 25 to 2500 eV per nucleon and fluences from 5 multiplied by 10**1**5 to 5 multiplied by 10**1**7 D/cm**2 to compare trapping and damage behavior.

UR - http://www.scopus.com/inward/record.url?scp=0021487816&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021487816&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0021487816

VL - 85

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 1

ER -