Cross sectional transmission electron microscopic study of Au/A111Bv contacts

B. Pecz, G. Radnoczi, A. Barna, R. Veresegyhazy, I. Mojzes

Research output: Conference contribution

2 Citations (Scopus)

Abstract

The application of cross sectional transmission microscopy largely contributed to the understanding of the thermal behaviour of Au/A111Bv contacts. In the Au/GaAs system the formation of pyramidal pits grown into the GaAs was observed. In the Au/GaP system the accumulation of Ga in the contact layer results in the melting of the metallization. The solidified metallization consists of Au2Ga and Au7Ga2 grains. In the Au/InP samples elongated crystals grew into the substrate during annealing. Au9In4 grains are situated in these pits in the matrix of the Au2P3 monoclinic phase.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by Inst of Physics Publ Ltd
Pages275-278
Number of pages4
Edition117
ISBN (Print)0854984062
Publication statusPublished - dec. 1 1991
EventProceedings of the Conference on Microscopy of Semiconducting Materials 1991 - Oxford, Engl
Duration: márc. 25 1991márc. 28 1991

Publication series

NameInstitute of Physics Conference Series
Number117
ISSN (Print)0373-0751

Conference

ConferenceProceedings of the Conference on Microscopy of Semiconducting Materials 1991
CityOxford, Engl
Period3/25/913/28/91

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Pecz, B., Radnoczi, G., Barna, A., Veresegyhazy, R., & Mojzes, I. (1991). Cross sectional transmission electron microscopic study of Au/A111Bv contacts. In Institute of Physics Conference Series (117 ed., pp. 275-278). (Institute of Physics Conference Series; No. 117). Publ by Inst of Physics Publ Ltd.