Comparison of growth rate and surface structure of carbon nitride films, pulsed laser deposited in parallel, on axis planes

Research output: Conference article

18 Citations (Scopus)

Abstract

Pairs of carbon nitride films have simultaneously been deposited by ArF excimer laser ablation of a graphite target in the 2-50 Pa nitrogen pressure window using a novel configuration. One substrate was parallel and 48 mm apart from the target in the traditional on-axis geometry, while the other was placed off-axis, in the target plane. The pressure dependence of the apparent growth rate, defined as the measured thickness per number of pulses, is significantly different for the two geometries. In the traditional configuration the growth rate is almost constant at approximately 0.003 and 0.025 nmpulse-1 for 1 and 5 Jcm-2, respectively. In the target plane it increases proportionally to the logarithm of N2 pressure for both fluences, reaching maximum values of 0.009 and 0.030 nmpulse-1 at 50 Pa. Complementary surface characterization by atomic force microscopy reveals that films of superior quality can be grown by this novel off-axis geometry, rendering it especially attractive in the high pressure domain.

Original languageEnglish
Pages (from-to)431-435
Number of pages5
JournalThin Solid Films
Volume453-454
DOIs
Publication statusPublished - ápr. 1 2004
EventProceedings of Symposium H on Photonic Processing of Surfaces - Strasbourg, France
Duration: jún. 10 2003jún. 13 2003

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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