Comments on the properties of an NH4OH‐H2O2 etch on epitaxial GaAs

Radácsi, I. Mojzes, J. Pfeifer

Research output: Article


The etching rate of the NH4OH : H2O2 : H2O = 1:4:20 etch was determined on epitaxial GaAs films and bulk GaAs monocrystals. The etching process has a rather large scattering at the start of the process depending on the origin and properties of films. The etching rate of epitaxial layers approaches the value of 2 μm/min, characteristic of bulk crystals. Surfaces treated with the 1:4:20 etch are applicable to ohmic contacts of Gunn diodes.

Original languageEnglish
Pages (from-to)747-751
Number of pages5
JournalKristall und Technik
Issue number6
Publication statusPublished - 1980


ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this