Charge carrier lifetime modification in silicon by high energy H+, He+ ion implantation

N. Q. Khánh, P. Tüttó, E. N. Jároli, O. Buiu, L. P. Biró, F. Pászti, T. Mohácsy, C. Kovacsics, A. Manuaba, J. Gyulai

Research output: Article

1 Citation (Scopus)

Abstract

MeV H+ or He+ was implanted into CZ-Si to set carrier lifetime with the aim of customization of power devices. Commercial Microwave Photoconductive Decay (μ-PCD, Semilab, Inc.) equipment was intended to use for wafer characterization. Realistic evaluation of μ-PCD data required a model to handle cases when the probing carrier pocket does not match the desired defect distribution. Parameters of this multilayer model were extracted from vacancy distributions using the TRIM code.

Original languageEnglish
Pages (from-to)101-106
Number of pages6
JournalMaterials Science Forum
Volume248-249
Publication statusPublished - jan. 1 1997

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Khánh, N. Q., Tüttó, P., Jároli, E. N., Buiu, O., Biró, L. P., Pászti, F., Mohácsy, T., Kovacsics, C., Manuaba, A., & Gyulai, J. (1997). Charge carrier lifetime modification in silicon by high energy H+, He+ ion implantation. Materials Science Forum, 248-249, 101-106.