Characterization of SiO2/SiNx gate insulators for graphene based nanoelectromechanical systems

E. Tóvári, M. Csontos, T. Kriváchy, P. Fürjes, S. Csonka

Research output: Article

2 Citations (Scopus)

Abstract

The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO2/SiNx heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing SiO2/SiNx gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiNx on the charge carrier mobility of graphene is comparable to that of SiO2, demonstrating the merits of SiNx as an ideal material platform for graphene based nanoelectromechanical applications.

Original languageEnglish
Article number123114
JournalApplied Physics Letters
Volume105
Issue number12
DOIs
Publication statusPublished - szept. 22 2014

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graphene
insulators
flakes
carrier mobility
visibility
charge carriers
film thickness
platforms
tuning

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Characterization of SiO2/SiNx gate insulators for graphene based nanoelectromechanical systems. / Tóvári, E.; Csontos, M.; Kriváchy, T.; Fürjes, P.; Csonka, S.

In: Applied Physics Letters, Vol. 105, No. 12, 123114, 22.09.2014.

Research output: Article

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