Anodic oxidation of p- and p+-type porous silicon: Surface structural transformations and oxide formation

J. L. Cantin, M. Schoisswohl, A. Grosman, S. Lebib, C. Ortega, H. J. Von Bardeleben, E. Vázsonyi, G. Jalsovszky, J. Erostyák

Research output: Article

30 Citations (Scopus)

Abstract

The transformations induced by the anodic oxidation process on the pore structure and surface states of p-type and p+-type porous silicon have been studied by Rutherford backscattering spectroscopy, local vibrational mode and electron paramagnetic resonance spectroscopy. Surprisingly the anodic oxidation does not lead to a significant formation of silicon oxide in p-type layers; the oxygen is mainly incorporated in silicon back-bonded configurations without perturbation of the initial H surface passivation. On the contrary, in p+-type samples, a uniform oxide layer of a thickness up to 45 Å is formed from the very first stages of anodic oxidation. The influence and correlations between the surface structure and the PL efficiency are discussed.

Original languageEnglish
Pages (from-to)76-79
Number of pages4
JournalThin Solid Films
Volume276
Issue number1-2
Publication statusPublished - ápr. 15 1996

Fingerprint

Porous silicon
Anodic oxidation
porous silicon
Oxides
oxidation
oxides
Silicon oxides
Rutherford backscattering spectroscopy
Surface states
Silicon
Pore structure
silicon oxides
Passivation
Surface structure
spectroscopy
passivity
Paramagnetic resonance
vibration mode
backscattering
electron paramagnetic resonance

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Cantin, J. L., Schoisswohl, M., Grosman, A., Lebib, S., Ortega, C., Von Bardeleben, H. J., ... Erostyák, J. (1996). Anodic oxidation of p- and p+-type porous silicon: Surface structural transformations and oxide formation. Thin Solid Films, 276(1-2), 76-79.

Anodic oxidation of p- and p+-type porous silicon : Surface structural transformations and oxide formation. / Cantin, J. L.; Schoisswohl, M.; Grosman, A.; Lebib, S.; Ortega, C.; Von Bardeleben, H. J.; Vázsonyi, E.; Jalsovszky, G.; Erostyák, J.

In: Thin Solid Films, Vol. 276, No. 1-2, 15.04.1996, p. 76-79.

Research output: Article

Cantin, JL, Schoisswohl, M, Grosman, A, Lebib, S, Ortega, C, Von Bardeleben, HJ, Vázsonyi, E, Jalsovszky, G & Erostyák, J 1996, 'Anodic oxidation of p- and p+-type porous silicon: Surface structural transformations and oxide formation', Thin Solid Films, vol. 276, no. 1-2, pp. 76-79.
Cantin JL, Schoisswohl M, Grosman A, Lebib S, Ortega C, Von Bardeleben HJ et al. Anodic oxidation of p- and p+-type porous silicon: Surface structural transformations and oxide formation. Thin Solid Films. 1996 ápr. 15;276(1-2):76-79.
Cantin, J. L. ; Schoisswohl, M. ; Grosman, A. ; Lebib, S. ; Ortega, C. ; Von Bardeleben, H. J. ; Vázsonyi, E. ; Jalsovszky, G. ; Erostyák, J. / Anodic oxidation of p- and p+-type porous silicon : Surface structural transformations and oxide formation. In: Thin Solid Films. 1996 ; Vol. 276, No. 1-2. pp. 76-79.
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T2 - Surface structural transformations and oxide formation

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AU - Grosman, A.

AU - Lebib, S.

AU - Ortega, C.

AU - Von Bardeleben, H. J.

AU - Vázsonyi, E.

AU - Jalsovszky, G.

AU - Erostyák, J.

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AB - The transformations induced by the anodic oxidation process on the pore structure and surface states of p-type and p+-type porous silicon have been studied by Rutherford backscattering spectroscopy, local vibrational mode and electron paramagnetic resonance spectroscopy. Surprisingly the anodic oxidation does not lead to a significant formation of silicon oxide in p-type layers; the oxygen is mainly incorporated in silicon back-bonded configurations without perturbation of the initial H surface passivation. On the contrary, in p+-type samples, a uniform oxide layer of a thickness up to 45 Å is formed from the very first stages of anodic oxidation. The influence and correlations between the surface structure and the PL efficiency are discussed.

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