Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

F. Yan, R. P. Devaty, W. J. Choyke, A. Gali, T. Kimoto, T. Ohshima, G. Pensl

Research output: Article

4 Citations (Scopus)

Abstract

Dicarbon antisite defects were created by either electron irradiation or ion implantation into 4H-SiC. The no-phonon lines from the dicarbon antisite defect center were observed with their phonon replicas. The stretch frequencies of the defect were observed up to the fifth harmonic. The Morse potential model accounts for the anharmonicity quite well and gives a very good prediction of the vibration energies up to the fifth harmonic with an error of less than 1. First principles calculations show that the model of a dicarbon antisite defect along with its four nearest neighboring carbon atoms can explain the observed anharmonicity.

Original languageEnglish
Article number132107
JournalApplied Physics Letters
Volume100
Issue number13
DOIs
Publication statusPublished - márc. 26 2012

Fingerprint

antisite defects
vibration
harmonics
Morse potential
electron irradiation
replicas
ion implantation
implantation
carbon
defects
predictions
atoms
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Yan, F., Devaty, R. P., Choyke, W. J., Gali, A., Kimoto, T., Ohshima, T., & Pensl, G. (2012). Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC. Applied Physics Letters, 100(13), [132107]. https://doi.org/10.1063/1.3699269

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC. / Yan, F.; Devaty, R. P.; Choyke, W. J.; Gali, A.; Kimoto, T.; Ohshima, T.; Pensl, G.

In: Applied Physics Letters, Vol. 100, No. 13, 132107, 26.03.2012.

Research output: Article

Yan, F, Devaty, RP, Choyke, WJ, Gali, A, Kimoto, T, Ohshima, T & Pensl, G 2012, 'Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC', Applied Physics Letters, vol. 100, no. 13, 132107. https://doi.org/10.1063/1.3699269
Yan F, Devaty RP, Choyke WJ, Gali A, Kimoto T, Ohshima T et al. Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC. Applied Physics Letters. 2012 márc. 26;100(13). 132107. https://doi.org/10.1063/1.3699269
Yan, F. ; Devaty, R. P. ; Choyke, W. J. ; Gali, A. ; Kimoto, T. ; Ohshima, T. ; Pensl, G. / Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC. In: Applied Physics Letters. 2012 ; Vol. 100, No. 13.
@article{12fb2d8c444b4004bc95fa8db49cc065,
title = "Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC",
abstract = "Dicarbon antisite defects were created by either electron irradiation or ion implantation into 4H-SiC. The no-phonon lines from the dicarbon antisite defect center were observed with their phonon replicas. The stretch frequencies of the defect were observed up to the fifth harmonic. The Morse potential model accounts for the anharmonicity quite well and gives a very good prediction of the vibration energies up to the fifth harmonic with an error of less than 1. First principles calculations show that the model of a dicarbon antisite defect along with its four nearest neighboring carbon atoms can explain the observed anharmonicity.",
author = "F. Yan and Devaty, {R. P.} and Choyke, {W. J.} and A. Gali and T. Kimoto and T. Ohshima and G. Pensl",
year = "2012",
month = "3",
day = "26",
doi = "10.1063/1.3699269",
language = "English",
volume = "100",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "13",

}

TY - JOUR

T1 - Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

AU - Yan, F.

AU - Devaty, R. P.

AU - Choyke, W. J.

AU - Gali, A.

AU - Kimoto, T.

AU - Ohshima, T.

AU - Pensl, G.

PY - 2012/3/26

Y1 - 2012/3/26

N2 - Dicarbon antisite defects were created by either electron irradiation or ion implantation into 4H-SiC. The no-phonon lines from the dicarbon antisite defect center were observed with their phonon replicas. The stretch frequencies of the defect were observed up to the fifth harmonic. The Morse potential model accounts for the anharmonicity quite well and gives a very good prediction of the vibration energies up to the fifth harmonic with an error of less than 1. First principles calculations show that the model of a dicarbon antisite defect along with its four nearest neighboring carbon atoms can explain the observed anharmonicity.

AB - Dicarbon antisite defects were created by either electron irradiation or ion implantation into 4H-SiC. The no-phonon lines from the dicarbon antisite defect center were observed with their phonon replicas. The stretch frequencies of the defect were observed up to the fifth harmonic. The Morse potential model accounts for the anharmonicity quite well and gives a very good prediction of the vibration energies up to the fifth harmonic with an error of less than 1. First principles calculations show that the model of a dicarbon antisite defect along with its four nearest neighboring carbon atoms can explain the observed anharmonicity.

UR - http://www.scopus.com/inward/record.url?scp=84859539307&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84859539307&partnerID=8YFLogxK

U2 - 10.1063/1.3699269

DO - 10.1063/1.3699269

M3 - Article

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

M1 - 132107

ER -