Analysis of chemical processes of plasma etching

G. Vályi, V. Schiller, J. Gyimesi, J. Gyulai

Research output: Article

2 Citations (Scopus)


The emission spectrum of the plasma during the etching of silicon and SiO2 layers was examined. Emission lines of fluorine (at 704 nm) and of CO (at 483.5 nm) were detected. The application of the latter line to the detection of the end point of etching is presented and the mechanism of etchant production is described in terms of the thermochemistry of the reactions.

Original languageEnglish
Pages (from-to)215-219
Number of pages5
JournalThin Solid Films
Issue number3
Publication statusPublished - febr. 13 1981

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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