Amorphisation effect in binary tellurides under low energy Ar+ ion bombardment

A. Csík, Dmytro M. Zayachuk, Vasyl E. Slynko, Ute Schmidt, Csaba Buga, Kálman Vad

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Abstract

Amorphisation effect on the surface of SnTe and GeTe samples under low Ar+ ion energy sputtering (160 eV) has been firstly observed. Scanning electron microscopy and Raman spectroscopy methods were used for the investigation. Microscope images show that ion bombardment changes significantly the morphology of SnTe and GeTe sample surfaces. Comparative Raman spectroscopy studies of the as-prepared and sputtered surfaces revealed that sputtering changes not only the surface morphology, but also the crystal structure of samples. Due to sputtering, the initial crystalline GeTe sample surface completely changed to amorphous, while the SnTe sample surface changed to a mixed amorphous-crystalline structure. This means that on the surface of IVB group binary tellurides an amorphisation can be evoked by low energy Ar+ ion bombardment, up to a few hundred electron volts energy.

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???pages???5-8
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???journalAssociation???Materials Letters
???volume???236
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???publicationStatus???Published - febr. 1 2019

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Tellurium compounds
Germanium compounds
tellurium compounds
germanium compounds
Tin Compounds
Tin compounds
tin compounds
tellurides
Spectroscopic analysis
Amorphization
spectroscopic analysis
Ion bombardment
Sputtering
Raman spectroscopy
bombardment
Crystal structure
sputtering
Crystalline materials
Scanning electron microscopy
scanning electron microscopy

Keywords

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

    Cite this

    Amorphisation effect in binary tellurides under low energy Ar+ ion bombardment. / Csík, A.; Zayachuk, Dmytro M.; Slynko, Vasyl E.; Schmidt, Ute; Buga, Csaba; Vad, Kálman.

    ???in???: Materials Letters, ???journal.volume??? 236, 01.02.2019, ???pages??? 5-8.

    ???family-name???: Article

    Csík, A, Zayachuk, DM, Slynko, VE, Schmidt, U, Buga, C & Vad, K 2019, 'Amorphisation effect in binary tellurides under low energy Ar+ ion bombardment', Materials Letters, ???journal.volume??? 236, ???pages??? 5-8. https://doi.org/10.1016/j.matlet.2018.10.061
    Csík, A. ; Zayachuk, Dmytro M. ; Slynko, Vasyl E. ; Schmidt, Ute ; Buga, Csaba ; Vad, Kálman. / Amorphisation effect in binary tellurides under low energy Ar+ ion bombardment. ???in???: Materials Letters. 2019 ; ???journal.volume??? 236. ???pages??? 5-8.
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    title = "Amorphisation effect in binary tellurides under low energy Ar+ ion bombardment",
    abstract = "Amorphisation effect on the surface of SnTe and GeTe samples under low Ar+ ion energy sputtering (160 eV) has been firstly observed. Scanning electron microscopy and Raman spectroscopy methods were used for the investigation. Microscope images show that ion bombardment changes significantly the morphology of SnTe and GeTe sample surfaces. Comparative Raman spectroscopy studies of the as-prepared and sputtered surfaces revealed that sputtering changes not only the surface morphology, but also the crystal structure of samples. Due to sputtering, the initial crystalline GeTe sample surface completely changed to amorphous, while the SnTe sample surface changed to a mixed amorphous-crystalline structure. This means that on the surface of IVB group binary tellurides an amorphisation can be evoked by low energy Ar+ ion bombardment, up to a few hundred electron volts energy.",
    keywords = "Amorphisation, Low energy ion bombardment, Raman spectroscopy, Tellurides",
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    T1 - Amorphisation effect in binary tellurides under low energy Ar+ ion bombardment

    AU - Csík, A.

    AU - Zayachuk, Dmytro M.

    AU - Slynko, Vasyl E.

    AU - Schmidt, Ute

    AU - Buga, Csaba

    AU - Vad, Kálman

    PY - 2019/2/1

    Y1 - 2019/2/1

    N2 - Amorphisation effect on the surface of SnTe and GeTe samples under low Ar+ ion energy sputtering (160 eV) has been firstly observed. Scanning electron microscopy and Raman spectroscopy methods were used for the investigation. Microscope images show that ion bombardment changes significantly the morphology of SnTe and GeTe sample surfaces. Comparative Raman spectroscopy studies of the as-prepared and sputtered surfaces revealed that sputtering changes not only the surface morphology, but also the crystal structure of samples. Due to sputtering, the initial crystalline GeTe sample surface completely changed to amorphous, while the SnTe sample surface changed to a mixed amorphous-crystalline structure. This means that on the surface of IVB group binary tellurides an amorphisation can be evoked by low energy Ar+ ion bombardment, up to a few hundred electron volts energy.

    AB - Amorphisation effect on the surface of SnTe and GeTe samples under low Ar+ ion energy sputtering (160 eV) has been firstly observed. Scanning electron microscopy and Raman spectroscopy methods were used for the investigation. Microscope images show that ion bombardment changes significantly the morphology of SnTe and GeTe sample surfaces. Comparative Raman spectroscopy studies of the as-prepared and sputtered surfaces revealed that sputtering changes not only the surface morphology, but also the crystal structure of samples. Due to sputtering, the initial crystalline GeTe sample surface completely changed to amorphous, while the SnTe sample surface changed to a mixed amorphous-crystalline structure. This means that on the surface of IVB group binary tellurides an amorphisation can be evoked by low energy Ar+ ion bombardment, up to a few hundred electron volts energy.

    KW - Amorphisation

    KW - Low energy ion bombardment

    KW - Raman spectroscopy

    KW - Tellurides

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